All MOSFET. CS7N80_A8 Datasheet

 

CS7N80_A8 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS7N80_A8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO220AB

CS7N80_A8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS7N80_A8 Datasheet (PDF)

1.1. cs7n80 a8.pdf Size:424K _crhj

CS7N80_A8
CS7N80_A8

Silicon N-Channel Power MOSFET R ○ CS7N80 A8 General Description: VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25℃) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

4.1. cs7n80f a9.pdf Size:303K _crhj

CS7N80_A8
CS7N80_A8

Silicon N-Channel Power MOSFET R ○ CS7N80F A9 General Description: VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: CS7N65_A0D , CS7N65_A3R , CS7N65_A3TDY , CS7N65_A4R , CS7N65_A4TDY , CS7N65F_A9R , CS7N65F_A9TDY , CS7N70_ARD , 2SK105 , CS7N80F_A9 , CS830_A3RD , CS830_A4RD , CS830_A8RD , CS830F_A9RD , CS840_A8D , CS840_A8H , CS840F_A9D .

 


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