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SI4850DY-T1 Spec and Replacement


   Type Designator: SI4850DY-T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO8

 SI4850DY-T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4850DY-T1 Specs

 ..1. Size:852K  cn vbsemi
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SI4850DY-T1

SI4850DY-T1 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCF... See More ⇒

 8.1. Size:289K  vishay
si4850bdy.pdf pdf_icon

SI4850DY-T1

Si4850BDY www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES SO-8 Single D TrenchFET Gen IV power MOSFET D 5 D 6 100 % Rg and UIS tested D 7 Material categorization 8 for definitions of compliance please see www.vishay.com/doc?99912 4 APPLICATIONS D G 3 3 Synchronous rectification S S 2 2 S S 1 1 Primary side switch S ... See More ⇒

 8.2. Size:243K  vishay
si4850ey.pdf pdf_icon

SI4850DY-T1

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs 60 0.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7 ... See More ⇒

 8.3. Size:246K  vishay
si4850ey-t1 si4850ey.pdf pdf_icon

SI4850DY-T1

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs 60 0.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7 ... See More ⇒

Detailed specifications: SSM3K335 , CS7N65A3R , SQ2348ES-T1 , CS7N65A4R , STD2NB60T4 , CS7N65FA9R , SI4848DY-T1 , SI4848DY-T1-E3 , AON7403 , CS7N80FA9 , ST2315S23R , ST2341S23R , STB60N06-14 , STC5NF20V , SM4305PSKC , SM4307PSKC-TRG , SQ9945BEY-T1-GE3 .

History: IXTP28P065T | H5N2503P | F20N50 | IXFX66N50Q2 | AP15P10GH | IRF640P | IRFBL12N50A

Keywords - SI4850DY-T1 MOSFET specs

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