SI4850DY-T1 Datasheet and Replacement

SI4850DY-T1www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCF

Si4850BDYwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET Gen IV power MOSFETD 5D 6 100 % Rg and UIS testedD 7 Material categorization:8for definitions of compliance please see www.vishay.com/doc?999124APPLICATIONS DG33 Synchronous rectification SS22SS11 Primary side switchS

Si4850EYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSO-8 SD1 8 SD2 7

Si4850EYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSO-8 SD1 8 SD2 7