CS8N25FA9 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS8N25FA9
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.47 Ohm
   Paquete / Cubierta: TO220F

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CS8N25FA9 Datasheet (PDF)

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cs8n25f a9.pdf

Silicon N-Channel Power MOSFET R CS8N25F A9 General Description VDSS 250 V CS8N25F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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cs8n25 a8h.pdf

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

8.2. Size:639K crhj
cs8n25 a4h.pdf

Silicon N-Channel Power MOSFET R CS8N25 A4H General Description VDSS 250 V CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

8.3. Size:635K wuxi china
cs8n25a8h.pdf