CS8N25FA9 - описание и поиск аналогов

 

CS8N25FA9. Аналоги и основные параметры

Наименование производителя: CS8N25FA9

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

Cossⓘ - Выходная емкость: 80 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.47 Ohm

Тип корпуса: TO220F

Аналог (замена) для CS8N25FA9

- подборⓘ MOSFET транзистора по параметрам

 

CS8N25FA9 даташит

 7.1. Size:613K  crhj
 cs8n25f a9.pdf pdf_icon

CS8N25FA9

Silicon N-Channel Power MOSFET R CS8N25F A9 General Description VDSS 250 V CS8N25F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:637K  crhj
 cs8n25 a8h.pdf pdf_icon

CS8N25FA9

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.2. Size:639K  crhj
 cs8n25 a4h.pdf pdf_icon

CS8N25FA9

Silicon N-Channel Power MOSFET R CS8N25 A4H General Description VDSS 250 V CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. Size:635K  wuxi china
 cs8n25a8h.pdf pdf_icon

CS8N25FA9

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... STB60N06-14 , STC5NF20V , SM4305PSKC , SM4307PSKC-TRG , SQ9945BEY-T1-GE3 , SQD40N06-14 , SUD50P04-09L-E3 , SUD50P06-15L-GE3 , IRF3205 , CS8N50A8R , CS8N50FA9R , CS8N60A8D , VB1101M , CS8N60ARD , TP0610K-T1 , TPC8103 , TPC8104 .

History: KI8810T | AP4515GM | 80N08A | 2SK3455B | 2SK846

 

 

 

 

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