All MOSFET. CS8N25FA9 Datasheet

 

CS8N25FA9 Datasheet and Replacement


   Type Designator: CS8N25FA9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO220F
      - MOSFET Cross-Reference Search

 

CS8N25FA9 Datasheet (PDF)

 7.1. Size:613K  crhj
 cs8n25f a9.pdf pdf_icon

CS8N25FA9

Silicon N-Channel Power MOSFET R CS8N25F A9 General Description VDSS 250 V CS8N25F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:637K  crhj
 cs8n25 a8h.pdf pdf_icon

CS8N25FA9

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.2. Size:639K  crhj
 cs8n25 a4h.pdf pdf_icon

CS8N25FA9

Silicon N-Channel Power MOSFET R CS8N25 A4H General Description VDSS 250 V CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. Size:635K  wuxi china
 cs8n25a8h.pdf pdf_icon

CS8N25FA9

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

SHOW MORE

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: WM02DN08D | SVGP20110NSTR | SVG104R0NSTR | MXP4004AT | 2SK3404-ZK | FDMC8676 | MEE42942-G

Keywords - CS8N25FA9 MOSFET datasheet

 CS8N25FA9 cross reference
 CS8N25FA9 equivalent finder
 CS8N25FA9 lookup
 CS8N25FA9 substitution
 CS8N25FA9 replacement

 

 
Back to Top

 


 
.