All MOSFET. CS8N25FA9 Datasheet

 

CS8N25FA9 Datasheet and Replacement


   Type Designator: CS8N25FA9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO220F
 

 CS8N25FA9 substitution

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CS8N25FA9 Datasheet (PDF)

 7.1. Size:613K  crhj
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CS8N25FA9

Silicon N-Channel Power MOSFET R CS8N25F A9 General Description VDSS 250 V CS8N25F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:637K  crhj
 cs8n25 a8h.pdf pdf_icon

CS8N25FA9

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.2. Size:639K  crhj
 cs8n25 a4h.pdf pdf_icon

CS8N25FA9

Silicon N-Channel Power MOSFET R CS8N25 A4H General Description VDSS 250 V CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. Size:635K  wuxi china
 cs8n25a8h.pdf pdf_icon

CS8N25FA9

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

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Datasheet: STB60N06-14 , STC5NF20V , SM4305PSKC , SM4307PSKC-TRG , SQ9945BEY-T1-GE3 , SQD40N06-14 , SUD50P04-09L-E3 , SUD50P06-15L-GE3 , IRF3205 , CS8N50A8R , CS8N50FA9R , CS8N60A8D , VB1101M , CS8N60ARD , TP0610K-T1 , TPC8103 , TPC8104 .

History: ISZ019N03L5S | IRLML9303

Keywords - CS8N25FA9 MOSFET datasheet

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