SI5504DC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI5504DC
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.9(2.1) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072(0.137) Ohm
Paquete / Cubierta: CHIP8

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SI5504DC Datasheet (PDF)

..1. Size:120K vishay
si5504dc.pdf

Si5504DCVishay SiliconixComplementary 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.085 at VGS = 10 V 3.9 TrenchFET Power MOSFETsN-Channel 300.143 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/EC0.165 at VGS = - 10 V 2.8P-Channel - 300.290 at VGS = - 4.5

..2. Size:2116K kexin
si5504dc.pdf

SMD Type MOSFETComplementary power Trench MOSFET SI5504DC (KI5504DC)1206-8 chipFET (Chip-8) Features N-ChannelVDS=30V ID= 3.9A RDS(ON) 85m (VGS = 10V) RDS(ON) 143m (VGS = 4.5 V) P-ChannelVDS=-30V ID=- 2.8A RDS(ON) 165m (VGS =-10V) RDS(ON) 290m (VGS =-4.5V)D1 S2G2G1S1 D2N-Channel MOSFET P-Channel MOSFET A

8.1. Size:291K vishay
si5504bdc.pdf

Si5504BDCwww.vishay.comVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () ID (A) Qg (TYP.) Material categorization:0.065 at VGS = 10 V 4 aFor definitions of compliance please seeN-Channel 30 2 nC0.100 at VGS = 4.5 V 4 a www.vishay.com/doc?99912 0.140 at VGS = -10 V -3.7P-Channel -30 2.2 nCA

8.2. Size:147K vishay
si5504bdc si5904bd.pdf

Si5504BDCVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ)Definition0.065 at VGS = 10 V 4a TrenchFET Power MOSFETsN-Channel 30 2 nC0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/EC0.140 at VGS = - 10 V - 3.7P-Channel - 30 2.2 nC APPLICA

9.1. Size:270K vishay
si5509dc.pdf

Si5509DCVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.052 at VGS = 4.5 V 6.1a TrenchFET Power MOSFETsN-Channel 20 3.9 nC0.084 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC4.8a0.090 at VGS = - 4.5 V - 4.8aP-Channel - 20 3.8 nC

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