SI5504DC
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI5504DC
Marking Code: EA**
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 2.9(2.1)
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.5
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072(0.137)
Ohm
Package: CHIP8
SI5504DC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI5504DC
Datasheet (PDF)
..1. Size:120K vishay
si5504dc.pdf 
Si5504DCVishay SiliconixComplementary 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.085 at VGS = 10 V 3.9 TrenchFET Power MOSFETsN-Channel 300.143 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/EC0.165 at VGS = - 10 V 2.8P-Channel - 300.290 at VGS = - 4.5
..2. Size:2116K kexin
si5504dc.pdf
SMD Type MOSFETComplementary power Trench MOSFET SI5504DC (KI5504DC)1206-8 chipFET (Chip-8) Features N-ChannelVDS=30V ID= 3.9A RDS(ON) 85m (VGS = 10V) RDS(ON) 143m (VGS = 4.5 V) P-ChannelVDS=-30V ID=- 2.8A RDS(ON) 165m (VGS =-10V) RDS(ON) 290m (VGS =-4.5V)D1 S2G2G1S1 D2N-Channel MOSFET P-Channel MOSFET A
8.1. Size:291K vishay
si5504bdc.pdf
Si5504BDCwww.vishay.comVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () ID (A) Qg (TYP.) Material categorization:0.065 at VGS = 10 V 4 aFor definitions of compliance please seeN-Channel 30 2 nC0.100 at VGS = 4.5 V 4 a www.vishay.com/doc?99912 0.140 at VGS = -10 V -3.7P-Channel -30 2.2 nCA
8.2. Size:147K vishay
si5504bdc si5904bd.pdf
Si5504BDCVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ)Definition0.065 at VGS = 10 V 4a TrenchFET Power MOSFETsN-Channel 30 2 nC0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/EC0.140 at VGS = - 10 V - 3.7P-Channel - 30 2.2 nC APPLICA
9.1. Size:270K vishay
si5509dc.pdf
Si5509DCVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.052 at VGS = 4.5 V 6.1a TrenchFET Power MOSFETsN-Channel 20 3.9 nC0.084 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC4.8a0.090 at VGS = - 4.5 V - 4.8aP-Channel - 20 3.8 nC
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