SI5504DC MOSFET. Datasheet pdf. Equivalent
Type Designator: SI5504DC
SMD Transistor Code: EA**
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 1.1 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 2.9(2.1) A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.072(0.137) Ohm
Package: CHIP8
SI5504DC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI5504DC Datasheet (PDF)
1.1. si5504dc.pdf 
Size:120K _vishay
Si5504DC Vishay Siliconix Complementary 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Definition 0.085 at VGS = 10 V 3.9 TrenchFET Power MOSFETs N-Channel 30 0.143 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/EC 0.165 at VGS = - 10 V 2.8 P-Channel - 30 0.290 at VGS = - 4.5 V 2.1 120
1.2. si5504dc.pdf Size:2116K _kexin
SMD Type MOSFET Complementary power Trench MOSFET SI5504DC (KI5504DC) 1206-8 chipFET (Chip-8) ■ Features ● N-Channel：VDS=30V ID= 3.9A ● RDS(ON) ＜ 85mΩ (VGS = 10V) ● RDS(ON) ＜ 143mΩ (VGS = 4.5 V) ● P-Channel：VDS=-30V ID=- 2.8A ● RDS(ON) ＜ 165mΩ (VGS =-10V) ● RDS(ON) ＜ 290mΩ (VGS =-4.5V) D1 S2 G2 G1 S1 D2 N-Channel MOSFET P-Channel MOSFET ■ A
4.1. si5504bdc.pdf Size:147K _vishay
Si5504BDC Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A) Qg (Typ) Definition 0.065 at VGS = 10 V 4a • TrenchFET® Power MOSFETs N-Channel 30 2 nC 0.100 at VGS = 4.5 V 4a • Compliant to RoHS Directive 2002/95/EC 0.140 at VGS = - 10 V - 3.7 P-Channel - 30 2.2 nC APPLICA
Datasheet: CS9N90F_A9D , CSZ44V-1 , AO4600 , AO4604 , AO4609 , AO4614A , AO4624 , SI4558DY , IRFP064N , SI5513CD , SIA517DJ , SI4953ADY , SI1903DL , SI4953DY , AO4824L , AO4900 , AO4906 .
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