SI5513CD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI5513CD
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4(2.5) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.8 V
   Qgⓘ - Carga de la puerta: 6.55 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025(0.08) Ohm
   Paquete / Cubierta: DFN

Búsqueda de reemplazo de MOSFET SI5513CD

SI5513CD Datasheet (PDF)

..1. Size:268K vishay
si5513cd.pdf

Si5513CDCVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.055 at VGS = 4.5 V TrenchFET Power MOSFETs4gN-Channel 20 2.6 nC 100 % Rg Tested0.085 at VGS = 2.5 V 4g Compliant to RoHS Directive 2002/95/EC0.150 at VGS = - 4.5 V - 3.7P-Ch

..2. Size:1883K kexin
si5513cd.pdf

SMD Type MOSFETComplementary Enhancement MOSFET SI5513CD (KI5513CD) Features N-ChannelVDS=20V ID=4A(VGS=4.5V)RDS(ON) 35m (VGS = 4.5V)RDS(ON) 50m (VGS = 2.5V)RDS(ON) 90m (VGS = 1.8V) P-ChannelVDS=-20V ID=-2.5A(VGS=-4.5V)RDS(ON) 85m (VGS =-4.5V)RDS(ON) 115m (VGS =-2.5V)RDS(ON) 150m (VGS =-1.8V) Absolute Maximum Rating

0.1. Size:271K vishay
si5513cdc.pdf

8.1. Size:242K vishay
si5513dc.pdf

Si5513DCVishay SiliconixComplementary 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.075 at VGS = 4.5 V 4.2 TrenchFET Power MOSFETsN-Channel 20 40.134 at VGS = 2.5 V 3.1 Compliant to RoHS Directive 2002/95/EC0.155 at VGS = - 4.5 V - 2.9P-Channel - 20 30.260 at VGS

9.1. Size:153K vishay
si5519du.pdf

Si5519DUVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETs0.036 at VGS = 4.5 V 6.0RoHSN-Channel 20 5.4 nC0.063 at VGS = 2.5 V COMPLIANT6.0APPLICATIONS0.064 at VGS = - 4.5 V - 6.0 Portable DC-DC ApplicationsP-Channel - 20 6.0 nC0.095 at VGS = - 2

9.2. Size:148K vishay
si5511dc.pdf

Si5511DCVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.055 at VGS = 4.5 V 4a,g TrenchFET Power MOSFETsN-Channel 30 4.2 nC0.090 at VGS = 2.5 V 4a,g Compliant to RoHS Directive 2002/95/EC0.150 at VGS = - 4.5 V - 3.6aP-Channel - 30 2.8

9.3. Size:258K vishay
si5515dc.pdf

Si5515DCVishay SiliconixComplementary 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.040 at VGS = 4.5 V 5.9 TrenchFET Power MOSFETs0.045 at VGS = 2.5 V N-Channel 20 5.6 Ultra Low RDS(on) and Excellent Power 0.052 at VGS = 1.8 V 5.2Handling In Compact Footprint0.086 at VGS = -

9.4. Size:271K vishay
si5515cd.pdf

Si5515CDCVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 4.5 V 4g TrenchFET Power MOSFETs0.041 at VGS = 2.5 V N-Channel 20 100 % Rg Tested4g 6.5 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 4g0.100

9.5. Size:178K vishay
si5517du.pdf

Si5517DUVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS RDS(on) ()ID (A)a Qg TrenchFET Power MOSFETs0.039 at VGS = 4.5 V 6 New Thermally Enhanced PowerPAKN-Channel 20 0.045 at VGS = 2.5 V 6 6 nc RoHSChipFET Package COMPLIANT0.055 at VGS = 1.8 V 6- Small Footprint Area0.072 at VGS = - 4.5 V - 6- Low O

9.6. Size:273K vishay
si5515cdc.pdf

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