SI5513CD - Даташиты. Аналоги. Основные параметры

Si5513CDCVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.055 at VGS = 4.5 V TrenchFET Power MOSFETs4gN-Channel 20 2.6 nC 100 % Rg Tested0.085 at VGS = 2.5 V 4g Compliant to RoHS Directive 2002/95/EC0.150 at VGS = - 4.5 V - 3.7P-Ch

SMD Type MOSFETComplementary Enhancement MOSFET SI5513CD (KI5513CD) Features N-ChannelVDS=20V ID=4A(VGS=4.5V)RDS(ON) 35m (VGS = 4.5V)RDS(ON) 50m (VGS = 2.5V)RDS(ON) 90m (VGS = 1.8V) P-ChannelVDS=-20V ID=-2.5A(VGS=-4.5V)RDS(ON) 85m (VGS =-4.5V)RDS(ON) 115m (VGS =-2.5V)RDS(ON) 150m (VGS =-1.8V) Absolute Maximum Rating

Si5513CDCVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.055 at VGS = 4.5 V TrenchFET Power MOSFETs4gN-Channel 20 2.6 nC 100 % Rg Tested0.085 at VGS = 2.5 V 4g Compliant to RoHS Directive 2002/95/EC0.150 at VGS = - 4.5 V - 3.7P-Ch

Si5513DCVishay SiliconixComplementary 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.075 at VGS = 4.5 V 4.2 TrenchFET Power MOSFETsN-Channel 20 40.134 at VGS = 2.5 V 3.1 Compliant to RoHS Directive 2002/95/EC0.155 at VGS = - 4.5 V - 2.9P-Channel - 20 30.260 at VGS

Si5519DUVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETs0.036 at VGS = 4.5 V 6.0RoHSN-Channel 20 5.4 nC0.063 at VGS = 2.5 V COMPLIANT6.0APPLICATIONS0.064 at VGS = - 4.5 V - 6.0 Portable DC-DC ApplicationsP-Channel - 20 6.0 nC0.095 at VGS = - 2

Si5511DCVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.055 at VGS = 4.5 V 4a,g TrenchFET Power MOSFETsN-Channel 30 4.2 nC0.090 at VGS = 2.5 V 4a,g Compliant to RoHS Directive 2002/95/EC0.150 at VGS = - 4.5 V - 3.6aP-Channel - 30 2.8

Si5515DCVishay SiliconixComplementary 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.040 at VGS = 4.5 V 5.9 TrenchFET Power MOSFETs0.045 at VGS = 2.5 V N-Channel 20 5.6 Ultra Low RDS(on) and Excellent Power 0.052 at VGS = 1.8 V 5.2Handling In Compact Footprint0.086 at VGS = -

Si5515CDCVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 4.5 V 4g TrenchFET Power MOSFETs0.041 at VGS = 2.5 V N-Channel 20 100 % Rg Tested4g 6.5 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 4g0.100

Si5517DUVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS RDS(on) ()ID (A)a Qg TrenchFET Power MOSFETs0.039 at VGS = 4.5 V 6 New Thermally Enhanced PowerPAKN-Channel 20 0.045 at VGS = 2.5 V 6 6 nc RoHSChipFET Package COMPLIANT0.055 at VGS = 1.8 V 6- Small Footprint Area0.072 at VGS = - 4.5 V - 6- Low O

Si5515CDCVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 4.5 V 4g TrenchFET Power MOSFETs0.041 at VGS = 2.5 V N-Channel 20 100 % Rg Tested4g 6.5 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 4g0.100