SI5513CD PDF and Equivalents Search

 

SI5513CD Specs and Replacement

Type Designator: SI5513CD

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4(2.5) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025(0.08) Ohm

Package: DFN

SI5513CD substitution

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SI5513CD datasheet

 ..1. Size:268K  vishay
si5513cd.pdf pdf_icon

SI5513CD

Si5513CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.055 at VGS = 4.5 V TrenchFET Power MOSFETs 4g N-Channel 20 2.6 nC 100 % Rg Tested 0.085 at VGS = 2.5 V 4g Compliant to RoHS Directive 2002/95/EC 0.150 at VGS = - 4.5 V - 3.7 P-Ch... See More ⇒

 ..2. Size:1883K  kexin
si5513cd.pdf pdf_icon

SI5513CD

SMD Type MOSFET Complementary Enhancement MOSFET SI5513CD (KI5513CD) Features N-Channel VDS=20V ID=4A(VGS=4.5V) RDS(ON) 35m (VGS = 4.5V) RDS(ON) 50m (VGS = 2.5V) RDS(ON) 90m (VGS = 1.8V) P-Channel VDS=-20V ID=-2.5A(VGS=-4.5V) RDS(ON) 85m (VGS =-4.5V) RDS(ON) 115m (VGS =-2.5V) RDS(ON) 150m (VGS =-1.8V) Absolute Maximum Rating... See More ⇒

 0.1. Size:271K  vishay
si5513cdc.pdf pdf_icon

SI5513CD

Si5513CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.055 at VGS = 4.5 V TrenchFET Power MOSFETs 4g N-Channel 20 2.6 nC 100 % Rg Tested 0.085 at VGS = 2.5 V 4g Compliant to RoHS Directive 2002/95/EC 0.150 at VGS = - 4.5 V - 3.7 P-Ch... See More ⇒

 8.1. Size:242K  vishay
si5513dc.pdf pdf_icon

SI5513CD

Si5513DC Vishay Siliconix Complementary 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.075 at VGS = 4.5 V 4.2 TrenchFET Power MOSFETs N-Channel 20 4 0.134 at VGS = 2.5 V 3.1 Compliant to RoHS Directive 2002/95/EC 0.155 at VGS = - 4.5 V - 2.9 P-Channel - 20 3 0.260 at VGS ... See More ⇒

Detailed specifications: CSZ44V-1 , AO4600 , AO4604 , AO4609 , AO4614A , AO4624 , SI4558DY , SI5504DC , STP75NF75 , SIA517DJ , SI4953ADY , SI1903DL , SI4953DY , AO4824L , AO4900 , AO4906 , AO4912 .

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