SI1903DL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMD Type MOSFETDual P-Channel MOSFETSI1903DL (KI1903DL) Features VDS (V) =-20V ID =-4.1 A (VGS =-10V) RDS(ON) 0.995 (VGS =-4.5V) RDS(ON) 1.19 (VGS =-3.6V) RDS(ON) 1.8 (VGS =-2.5V)1 S1 4 S22 G1 5 G23 D2 6 D1S1 1 6 D15G1 2 G2D2 3 4 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol 5 Secs Steady State Unit Drain-S

Si1905BDHVishay SiliconixDual P-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.542 at VGS = - 4.5 V - 0.63 TrenchFET Power MOSFET- 8 0.798 at VGS = - 2.5 V - 0.52 10.5 nC Compliant to RoHS Directive 2002/95/EC1.2 at VGS = - 1.8 V - 0.20APPLICATIONS Load Switc

Si1907DLVishay SiliconixDual P-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8 V RatedVDS (V) rDS(on) ()ID (A)Pb-free0.650 at VGS = - 4.5 V 0.56 AvailableRoHS*0.925 at VGS = - 2.5 V 0.47- 12COMPLIANT1.310 at VGS = - 1.8 V 0.39SOT-363SC-70 (6-LEADS)S1 1 6 D1M arking C odeMarking Code PA X XQC X5G1 2 G2

Si1902DLVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition TrenchFET Power MOSFETs: 2.5 V Rated0.385 at VGS = 4.5 V 0.7020 Compliant to RoHS Directive 2002/95/EC0.630 at VGS = 2.5 V 0.54SOT-363 SC-70 (6-LEADS)S1 1 6 D1 M arking C o d eMarking Code

Si1900DLVishay SiliconixDual N-Channel 30 V (D-S) MOSFET#FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.480 at VGS = 10 V 0.63 TrenchFET Power MOSFET300.700 at VGS = 4.5 V 0.52 Compliant to RoHS Directive 2002/95/ECSOT-363SC-70 (6-LEADS)S1 1 6 D1Marking CodePB XX5G1 2 G2Lot Traceabili

Si1906DLNew ProductVishay SiliconixN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)2.0 @ VGS = 4.5 V 25020202.5 @ VGS = 2.5 V 150SOT-363SC-70 (6-Leads)Marking CodeS1 1 6 D1PC XXG1 2 5 G2Lot Traceabilityand Date Code4D2 3 S2Part # CodeTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit Unit

Si1901DLNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)3.8 @ VGS = 4.5 V 18020205.0 @ VGS = 2.5 V 100SOT-363SC-70 (6-Leads)Marking CodeS1 1 6 D1QD XXG1 2 5 G2Lot Traceabilityand Date Code4D2 3 S2Part # CodeTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter S

New ProductSi1902CDLVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.235 at VGS = 4.5 V 1.120 0.9 100 % Rg Tested0.306 at VGS = 2.5 V 1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch and DC

Si1905DLNew ProductVishay SiliconixDual P-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.600 @ VGS = 4.5 V"0.60880.850 @ VGS = 2.5 V "0.501.200 @ VGS = 1.8 V "0.42SOT-363SC-70 (6-LEADS)S1 1 6 D1 Marking CodeQB XX5G1 2 G2Lot Traceabilityand Date CodePart # CodeD2 3 4 S2Top ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLE