SI1903DL PDF and Equivalents Search

 

SI1903DL Specs and Replacement


   Type Designator: SI1903DL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 40 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.995 Ohm
   Package: SOT363
 

 SI1903DL substitution

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SI1903DL datasheet

 ..1. Size:1442K  kexin
si1903dl.pdf pdf_icon

SI1903DL

SMD Type MOSFET Dual P-Channel MOSFET SI1903DL (KI1903DL) Features VDS (V) =-20V ID =-4.1 A (VGS =-10V) RDS(ON) 0.995 (VGS =-4.5V) RDS(ON) 1.19 (VGS =-3.6V) RDS(ON) 1.8 (VGS =-2.5V) 1 S1 4 S2 2 G1 5 G2 3 D2 6 D1 S1 1 6 D1 5 G1 2 G2 D2 3 4 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 Secs Steady State Unit Drain-S... See More ⇒

 9.1. Size:105K  vishay
si1905bd.pdf pdf_icon

SI1903DL

Si1905BDH Vishay Siliconix Dual P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.542 at VGS = - 4.5 V - 0.63 TrenchFET Power MOSFET - 8 0.798 at VGS = - 2.5 V - 0.52 10.5 nC Compliant to RoHS Directive 2002/95/EC 1.2 at VGS = - 1.8 V - 0.20 APPLICATIONS Load Switc... See More ⇒

 9.2. Size:116K  vishay
si1907dl.pdf pdf_icon

SI1903DL

Si1907DL Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS 1.8 V Rated VDS (V) rDS(on) ( )ID (A) Pb-free 0.650 at VGS = - 4.5 V 0.56 Available RoHS* 0.925 at VGS = - 2.5 V 0.47 - 12 COMPLIANT 1.310 at VGS = - 1.8 V 0.39 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 M arking C ode Marking Code PA X X QC X 5 G1 2 G2 ... See More ⇒

 9.3. Size:224K  vishay
si1902dl.pdf pdf_icon

SI1903DL

Si1902DL Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition TrenchFET Power MOSFETs 2.5 V Rated 0.385 at VGS = 4.5 V 0.70 20 Compliant to RoHS Directive 2002/95/EC 0.630 at VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 M arking C o d e Marking Code ... See More ⇒

Detailed specifications: AO4609 , AO4614A , AO4624 , SI4558DY , SI5504DC , SI5513CD , SIA517DJ , SI4953ADY , IRF4905 , SI4953DY , AO4824L , AO4900 , AO4906 , AO4912 , AO4918 , AO6804 , KI8205A .

History: IXFH7N90 | IXKC25N80C | TK16A60W | AGM18N20D | IPI60R165CP | AGM20P22AS | IRHM7264SE

Keywords - SI1903DL MOSFET specs

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