SI1903DL datasheet, подбор замены

 ..1. Size:1442K  kexin
 si1903dl.pdf 

SMD Type MOSFET Dual P-Channel MOSFET SI1903DL (KI1903DL) Features VDS (V) =-20V ID =-4.1 A (VGS =-10V) RDS(ON) 0.995 (VGS =-4.5V) RDS(ON) 1.19 (VGS =-3.6V) RDS(ON) 1.8 (VGS =-2.5V) 1 S1 4 S2 2 G1 5 G2 3 D2 6 D1 S1 1 6 D1 5 G1 2 G2 D2 3 4 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 Secs Steady State Unit Drain-S

 9.1. Size:105K  vishay
 si1905bd.pdf 

Si1905BDH Vishay Siliconix Dual P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.542 at VGS = - 4.5 V - 0.63 TrenchFET Power MOSFET - 8 0.798 at VGS = - 2.5 V - 0.52 10.5 nC Compliant to RoHS Directive 2002/95/EC 1.2 at VGS = - 1.8 V - 0.20 APPLICATIONS Load Switc

 9.2. Size:116K  vishay
 si1907dl.pdf 

Si1907DL Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS 1.8 V Rated VDS (V) rDS(on) ( )ID (A) Pb-free 0.650 at VGS = - 4.5 V 0.56 Available RoHS* 0.925 at VGS = - 2.5 V 0.47 - 12 COMPLIANT 1.310 at VGS = - 1.8 V 0.39 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 M arking C ode Marking Code PA X X QC X 5 G1 2 G2

 9.3. Size:224K  vishay
 si1902dl.pdf 

Si1902DL Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition TrenchFET Power MOSFETs 2.5 V Rated 0.385 at VGS = 4.5 V 0.70 20 Compliant to RoHS Directive 2002/95/EC 0.630 at VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 M arking C o d e Marking Code

 9.4. Size:211K  vishay
 si1900dl.pdf 

Si1900DL Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET # FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.480 at VGS = 10 V 0.63 TrenchFET Power MOSFET 30 0.700 at VGS = 4.5 V 0.52 Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code PB XX 5 G1 2 G2 Lot Traceabili

 9.5. Size:61K  vishay
 si1906dl.pdf 

Si1906DL New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 20 20 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) Marking Code S1 1 6 D1 PC XX G1 2 5 G2 Lot Traceability and Date Code 4 D2 3 S2 Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit

 9.6. Size:62K  vishay
 si1901dl.pdf 

Si1901DL New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 3.8 @ VGS = 4.5 V 180 20 20 5.0 @ VGS = 2.5 V 100 SOT-363 SC-70 (6-Leads) Marking Code S1 1 6 D1 QD XX G1 2 5 G2 Lot Traceability and Date Code 4 D2 3 S2 Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter S

 9.7. Size:234K  vishay
 si1902cdl.pdf 

New Product Si1902CDL Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.235 at VGS = 4.5 V 1.1 20 0.9 100 % Rg Tested 0.306 at VGS = 2.5 V 1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch and DC

 9.8. Size:84K  vishay
 si1905dl.pdf 

Si1905DL New Product Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.600 @ VGS = 4.5 V "0.60 8 8 0.850 @ VGS = 2.5 V "0.50 1.200 @ VGS = 1.8 V "0.42 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code QB XX 5 G1 2 G2 Lot Traceability and Date Code Part # Code D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLE