SI9926BDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMD Type MOSFETSMD TypeDual N-Channel MOSFETSI9926BDY (KI9926BDY) Features SOP-8 RDS(on) = 0.027 @ VGS = 4.5 V RDS(on) = 0.036 @ VGS = 2.5 V.1.50 0.15D D1 2S D1 1 8 1G D1 2 7 1S D G G2 3 6 2 1 2G D2 4 5 2S S1 2 Absolute Maximum Ratings Ta = 25Parameter Symbol 10 sec Steady State UnitDrain-Source Voltage VDS 20 VGate-Source Volta

SMD Type MOSFETDual N-Channel MOSFETSI9926DY-HF (KI9926DY-HF)SOP-8 Features VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 30m (VGS = 4.5V)1.50 0.15 RDS(ON) 43m (VGS = 2.5V) Low gate charge1 Source 5 Drain Pb-Free Package May be Available. The G-Suffix Denotes a6 Drain2 Gate7 Drain3 SourcePb-Free Lead Finish8 Drain4 Gat

SMD Type MOSFETSMD TypeDual N-Channel MOSFETSI9926DY (KI9926DY)TSSOP-8Unit: mm Features RDS(on) 0.032 @ VGS = 4.5 V6.45+0.1-0.14.45+0.1-0.1 RDS(on) 0.045 @ VGS = 2.5 V.1 : Drain1 5 : Gate22 : Source 6 : Source21D1D213 : Source 7 : Source2S1S24 : Gate1 8 : Drain2S1 S2G1G2 Absolute Maximum Ratings Ta = 25Parameter

SMD Type MOSFETDual N-Channel MOSFETSI9926DY (KI9926DY)SOP-8 Features VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 30m (VGS = 4.5V)1.50 0.15 RDS(ON) 43m (VGS = 2.5V) Low gate charge1 Source 5 Drain6 Drain2 Gate7 Drain3 Source8 Drain4 Gate5 4Q16 37 2Q28 1 Absolute Maximum Ratings Ta = 25Parameter Symbol R