SI9926BDY Datasheet and Replacement
Type Designator: SI9926BDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 8.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 52 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
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SI9926BDY Datasheet (PDF)
si9926bdy.pdf

SMD Type MOSFETSMD TypeDual N-Channel MOSFETSI9926BDY (KI9926BDY) Features SOP-8 RDS(on) = 0.027 @ VGS = 4.5 V RDS(on) = 0.036 @ VGS = 2.5 V.1.50 0.15D D1 2S D1 1 8 1G D1 2 7 1S D G G2 3 6 2 1 2G D2 4 5 2S S1 2 Absolute Maximum Ratings Ta = 25Parameter Symbol 10 sec Steady State UnitDrain-Source Voltage VDS 20 VGate-Source Volta
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFY044C | IRFWZ44A | 2SK2973 | 2N6800JANTXV | SIB411DK | 2SK3009P | SI9434BDY
Keywords - SI9926BDY MOSFET datasheet
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History: IRFY044C | IRFWZ44A | 2SK2973 | 2N6800JANTXV | SIB411DK | 2SK3009P | SI9434BDY



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