SI9926BDY Datasheet. Specs and Replacement
Type Designator: SI9926BDY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 8.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 52 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
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SI9926BDY datasheet
si9926bdy.pdf
SMD Type MOSFET SMD Type Dual N-Channel MOSFET SI9926BDY (KI9926BDY) Features SOP-8 RDS(on) = 0.027 @ VGS = 4.5 V RDS(on) = 0.036 @ VGS = 2.5 V. 1.50 0.15 D D 1 2 S D 1 1 8 1 G D 1 2 7 1 S D G G 2 3 6 2 1 2 G D 2 4 5 2 S S 1 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 sec Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Volta... See More ⇒
Detailed specifications: AO6804, KI8205A, KI8205T, KI8810DY, KI8810T, KI9926A, KX4N03W, SI4946DY, RFP50N06, SI9926DY, 2SJ130S, 2SJ213, 2SJ302-ZJ, 2SJ356, 2SJ492-ZJ, 2SJ599-Z, 2SJ600-Z
Keywords - SI9926BDY MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
MOSFET Parameters. How They Affect Each Other
History: CS5210 | IRF7503PBF | RUH85120S | BF965 | IRF8304M | SVF4N60CAT | APT904RBN
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