SI9926BDY Datasheet and Replacement
Type Designator: SI9926BDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 8.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 52 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
SI9926BDY substitution
SI9926BDY Datasheet (PDF)
si9926bdy.pdf

SMD Type MOSFETSMD TypeDual N-Channel MOSFETSI9926BDY (KI9926BDY) Features SOP-8 RDS(on) = 0.027 @ VGS = 4.5 V RDS(on) = 0.036 @ VGS = 2.5 V.1.50 0.15D D1 2S D1 1 8 1G D1 2 7 1S D G G2 3 6 2 1 2G D2 4 5 2S S1 2 Absolute Maximum Ratings Ta = 25Parameter Symbol 10 sec Steady State UnitDrain-Source Voltage VDS 20 VGate-Source Volta
Datasheet: AO6804 , KI8205A , KI8205T , KI8810DY , KI8810T , KI9926A , KX4N03W , SI4946DY , IRLZ44N , SI9926DY , 2SJ130S , 2SJ213 , 2SJ302-ZJ , 2SJ356 , 2SJ492-ZJ , 2SJ599-Z , 2SJ600-Z .
Keywords - SI9926BDY MOSFET datasheet
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History: KTK5132S | N0302P



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