2SJ302-ZJ Datasheet. Equivalente

 ..1. Size:1885K  kexin
 2sj302-zj.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ302-ZJ Features VDS (V) =-60V ID =-16 A RDS(ON) 100m (VGS =-10V) RDS(ON) 240m (VGS =-4V) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS -20,+10 Continuous Drain Current ID -16 A Pulsed Drain Current (Note.1) IDM -64 Power Dissi

 6.1. Size:442K  nec
 2sj302-z.pdf

 8.1. Size:440K  nec
 2sj302.pdf

 9.1. Size:335K  toshiba
 2sj305.pdf

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit mm Analog Applications High input impedance Low gate threshold voltage. V = -0.5 -1.5 V th Excellent switching times. t = 0.06 s (typ.) on t = 0.15 s (typ.) off Low drain-source ON resistance R = 2.4 (typ.) DS (ON) Small packa

 9.2. Size:379K  toshiba
 2sj304.pdf

2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSIV) 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 80 m (typ.) DS (ON) High forward transfer admittance Y = 8.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-m

 9.3. Size:96K  sanyo
 2sj308.pdf

Ordering number EN4318 P-Channel Silicon MOSFET 2SJ308 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ308] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO-

 9.4. Size:115K  sanyo
 2sj307.pdf

Ordering number EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ307] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO T

 9.5. Size:94K  sanyo
 2sj306.pdf

Ordering number EN4316 P-Channel Silicon MOSFET 2SJ306 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ306] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO-

 9.6. Size:435K  nec
 2sj303.pdf