2SJ302-ZJ Datasheet and Replacement
Type Designator: 2SJ302-ZJ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 670 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO263
2SJ302-ZJ substitution
2SJ302-ZJ Datasheet (PDF)
2sj302-zj.pdf

SMD Type MOSFETP-Channel MOSFET2SJ302-ZJ Features VDS (V) =-60V ID =-16 A RDS(ON) 100m (VGS =-10V) RDS(ON) 240m (VGS =-4V) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS -20,+10 Continuous Drain Current ID -16A Pulsed Drain Current (Note.1) IDM -64 Power Dissi
2sj305.pdf

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit: mm Analog Applications High input impedance Low gate threshold voltage.: V = -0.5~-1.5 V th Excellent switching times.: t = 0.06 s (typ.) ont = 0.15 s (typ.) off Low drain-source ON resistance: R = 2.4 (typ.) DS (ON) Small packa
Datasheet: KI8810T , KI9926A , KX4N03W , SI4946DY , SI9926BDY , SI9926DY , 2SJ130S , 2SJ213 , IRFP250 , 2SJ356 , 2SJ492-ZJ , 2SJ599-Z , 2SJ600-Z , 2SJ602-ZJ , 2SJ603-ZJ , 2SJ604-ZJ , 2SJ605-ZJ .
History: WMM120P06TS | FDD2670
Keywords - 2SJ302-ZJ MOSFET datasheet
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History: WMM120P06TS | FDD2670



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