NTMS10P02R2 Todos los transistores

 

NTMS10P02R2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMS10P02R2

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SOP8

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NTMS10P02R2 datasheet

 ..1. Size:175K  onsemi
 ntms10p02r2.pdf pdf_icon

NTMS10P02R2

NTMS10P02R2 Power MOSFET -10 Amps, -20 Volts P-Channel Enhancement-Mode Single SOIC-8 Package Features http //onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life -10 AMPERES Logic Level Gate Drive -20 VOLTS Miniature SOIC-8 Surface Mount Package 14 mW @ VGS = -4.5 V Diode Exhibits High Speed, Soft Recovery P-Channel Avalanche Energy Spec

 ..2. Size:175K  onsemi
 ntms10p02r2 ntms10p02r2g.pdf pdf_icon

NTMS10P02R2

NTMS10P02R2 Power MOSFET -10 Amps, -20 Volts P-Channel Enhancement-Mode Single SOIC-8 Package Features http //onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life -10 AMPERES Logic Level Gate Drive -20 VOLTS Miniature SOIC-8 Surface Mount Package 14 mW @ VGS = -4.5 V Diode Exhibits High Speed, Soft Recovery P-Channel Avalanche Energy Spec

 ..3. Size:1661K  kexin
 ntms10p02r2.pdf pdf_icon

NTMS10P02R2

SMD Type MOSFET P-Channel MOSFET NTMS10P02R2 (KTMS10P02R2) SOP-8 Features VDS (V) =-20V ID =-10 A (VGS =-10V) 1.50 0.15 RDS(ON) 14 m (VGS =-4.5V) RDS(ON) 20m (VGS =-2.5V) Diode Exhibits High Speed, Soft Recovery 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D 8 Drain 4 Gate G S Absolute Maximum Ratings Ta = 25 Parameter S

 0.1. Size:898K  cn vbsemi
 ntms10p02r2g.pdf pdf_icon

NTMS10P02R2

NTMS10P02R2G www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typi

MOSTRAR MÁS

Otros transistores... KO4407 , KX5P02 , KX5P04DY , KX6P02 , KX9435 , KXF2955 , NDT12P20 , NDT40P04 , IRF730 , NTR4101P , SI2301BDS , IXFP18N65X2 , SI2303BDS , SI2303DS , SI2305DS , SI2307BDS , SI2307DS .

History: BR20N40 | SI1028X | AP4569GM | HY3810PM | AOD404 | PCJ3139K | SVT078R0ND

 

 

 

 

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