NTMS10P02R2 Datasheet. Specs and Replacement

Type Designator: NTMS10P02R2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOP8

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NTMS10P02R2 datasheet

 ..1. Size:175K  onsemi
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NTMS10P02R2

NTMS10P02R2 Power MOSFET -10 Amps, -20 Volts P-Channel Enhancement-Mode Single SOIC-8 Package Features http //onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life -10 AMPERES Logic Level Gate Drive -20 VOLTS Miniature SOIC-8 Surface Mount Package 14 mW @ VGS = -4.5 V Diode Exhibits High Speed, Soft Recovery P-Channel Avalanche Energy Spec... See More ⇒

 ..2. Size:175K  onsemi
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NTMS10P02R2

NTMS10P02R2 Power MOSFET -10 Amps, -20 Volts P-Channel Enhancement-Mode Single SOIC-8 Package Features http //onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life -10 AMPERES Logic Level Gate Drive -20 VOLTS Miniature SOIC-8 Surface Mount Package 14 mW @ VGS = -4.5 V Diode Exhibits High Speed, Soft Recovery P-Channel Avalanche Energy Spec... See More ⇒

 ..3. Size:1661K  kexin
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NTMS10P02R2

SMD Type MOSFET P-Channel MOSFET NTMS10P02R2 (KTMS10P02R2) SOP-8 Features VDS (V) =-20V ID =-10 A (VGS =-10V) 1.50 0.15 RDS(ON) 14 m (VGS =-4.5V) RDS(ON) 20m (VGS =-2.5V) Diode Exhibits High Speed, Soft Recovery 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D 8 Drain 4 Gate G S Absolute Maximum Ratings Ta = 25 Parameter S... See More ⇒

 0.1. Size:898K  cn vbsemi
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NTMS10P02R2

NTMS10P02R2G www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typi... See More ⇒

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Detailed specifications: KO4407, KX5P02, KX5P04DY, KX6P02, KX9435, KXF2955, NDT12P20, NDT40P04, IRF730, NTR4101P, SI2301BDS, IXFP18N65X2, SI2303BDS, SI2303DS, SI2305DS, SI2307BDS, SI2307DS

Keywords - NTMS10P02R2 MOSFET specs

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