F501 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F501
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55.8 nS
Cossⓘ - Capacitancia de salida: 4.53 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 750 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET F501
Principales características: F501
f501.pdf
SMD Type Transistors Silicon N-Channel Power MOSFET (Depletion Mode) F501 SOT-23 Unit mm Features +0.1 2.9 -0.1 VDS (V) = 500V +0.1 0.4 -0.1 ID = 0.03 A (VGS = 10V) 3 RDS(ON) 850 (VGS = 10V) RDS(ON) 750 (VGS = 0V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1. Gate 1. Gate 1. Gate 2. Source 2. Source 2. Source 3. Drain 3.
mrf5015rev6d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5
mrf5015.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5
mrf5015r.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5
Otros transistores... AO4476 , AO4492 , AO4702 , AO4704 , AP2322GN , AP9974 , BSS138E , D1096 , 2SK3568 , IRFP064PBF , KDT3055L , KI010NDS , KI138K , KI1N60 , KI1N60DS , KI2310 , KI2310DS .
History: CTU10P060 | IXFV12N90PS
History: CTU10P060 | IXFV12N90PS
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