F501 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F501
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55.8 nS
Cossⓘ - Capacitancia de salida: 4.53 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 750 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de F501 MOSFET
F501 Datasheet (PDF)
f501.pdf

SMD Type TransistorsSilicon N-Channel Power MOSFET (Depletion Mode)F501 SOT-23Unit: mm Features+0.12.9 -0.1 VDS (V) = 500V+0.10.4 -0.1 ID = 0.03 A (VGS = 10V)3 RDS(ON) 850 (VGS = 10V) RDS(ON) 750 (VGS = 0V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11. Gate1. Gate1. Gate2. Source2. Source2. Source3. Drain3.
mrf5015rev6d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
mrf5015.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
mrf5015r.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
Otros transistores... AO4476 , AO4492 , AO4702 , AO4704 , AP2322GN , AP9974 , BSS138E , D1096 , 5N65 , IRFP064PBF , KDT3055L , KI010NDS , KI138K , KI1N60 , KI1N60DS , KI2310 , KI2310DS .
History: KTK597 | FQAF12N60 | SIF1N65C | HMS8N60F | NTMFS5H425NLT1G | NCE8651Q | WSF09N20G
History: KTK597 | FQAF12N60 | SIF1N65C | HMS8N60F | NTMFS5H425NLT1G | NCE8651Q | WSF09N20G



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