F501 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F501
Código: F501
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.5 W
Tensión drenaje-fuente (Vds): 500 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 0.03 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 55.8 nS
Conductancia de drenaje-sustrato (Cd): 4.53 pF
Resistencia drenaje-fuente RDS(on): 750 Ohm
Empaquetado / Estuche: SOT23
Búsqueda de reemplazo de MOSFET F501
F501 Datasheet (PDF)
1.1. mrf5015r.pdf 
Size:138K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor NChannel EnhancementMode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in 12.5 volt mob
1.2. mrf5015rev6d.pdf Size:154K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor NChannel EnhancementMode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in 12.5 volt mob
1.3. f5016 f5017 f5018 f5019 f5020 f5021 f5022 f5023.pdf Size:40K _fuji
パワーMOSFET / Pסwer MOSFETs ■ パワーMOSFET Pסwer MOSFET 高機能パワー F T I F T 形 式 VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) パッケージ 質 量 ＊ Device type Max. Typ. Package Net mass Volts Amps. Amps. Ohms (Ω) Watts Volts Volts Grams F5018 40 8 - 0.14 15 - - K-pack 0.6 F5019 40 12 - 0.14 30 - - T-pack 1.6 F5020 40 3
1.4. f501.pdf Size:5799K _kexin
SMD Type Transistors Silicon N-Channel Power MOSFET (Depletion Mode) F501 SOT-23 Unit: mm ■ Features +0.1 2.9 -0.1 ● VDS (V) = 500V +0.1 0.4 -0.1 ● ID = 0.03 A (VGS = 10V) 3 ● RDS(ON) ＜ 850 Ω (VGS = 10V) ● RDS(ON) ＜ 750 Ω (VGS = 0V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1. Gate 1. Gate 1. Gate 2. Source 2. Source 2. Source 3. Drain 3.
Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .
