SMD Type TransistorsSilicon N-Channel Power MOSFET (Depletion Mode)F501 SOT-23Unit: mm Features+0.12.9 -0.1 VDS (V) = 500V+0.10.4 -0.1 ID = 0.03 A (VGS = 10V)3 RDS(ON) 850 (VGS = 10V) RDS(ON) 750 (VGS = 0V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11. Gate1. Gate1. Gate2. Source2. Source2. Source3. Drain3.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

MOSFET / Pwer MOSFETs MOSFET Pwer MOSFET F TI F T VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) Device type Max. Typ. Package Net massVolts Amps. Amps. Ohms () Watts Volts Volts GramsF5018 40 8 - 0.14 15 - - K-pack 0.6F5019 40 12 - 0.14 30 - - T-pack 1.6F5020 40 3

F501D 600V Depletion-Mode Power MOSFET General Features BVDSX RDS(ON),typ. IDSS Proprietary Advanced Planar Technology 600V 350 12mA Depletion Mode (Normally On) ESD improved Capability Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available Applications Synchronous Rectification Normally-