All MOSFET. F501 Datasheet

 

F501 Datasheet and Replacement


   Type Designator: F501
   Marking Code: F501
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.14 nC
   tr ⓘ - Rise Time: 55.8 nS
   Cossⓘ - Output Capacitance: 4.53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 750 Ohm
   Package: SOT23
 

 F501 substitution

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F501 Datasheet (PDF)

 ..1. Size:5799K  kexin
f501.pdf pdf_icon

F501

SMD Type TransistorsSilicon N-Channel Power MOSFET (Depletion Mode)F501 SOT-23Unit: mm Features+0.12.9 -0.1 VDS (V) = 500V+0.10.4 -0.1 ID = 0.03 A (VGS = 10V)3 RDS(ON) 850 (VGS = 10V) RDS(ON) 750 (VGS = 0V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11. Gate1. Gate1. Gate2. Source2. Source2. Source3. Drain3.

 0.1. Size:154K  motorola
mrf5015rev6d.pdf pdf_icon

F501

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

 0.2. Size:138K  motorola
mrf5015.pdf pdf_icon

F501

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

 0.3. Size:138K  motorola
mrf5015r.pdf pdf_icon

F501

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

Datasheet: AO4476 , AO4492 , AO4702 , AO4704 , AP2322GN , AP9974 , BSS138E , D1096 , 5N65 , IRFP064PBF , KDT3055L , KI010NDS , KI138K , KI1N60 , KI1N60DS , KI2310 , KI2310DS .

History: SVT044R5NDTR

Keywords - F501 MOSFET datasheet

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