F501
MOSFET. Datasheet pdf. Equivalent
Type Designator: F501
Marking Code: F501
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 0.03
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.14
nC
trⓘ - Rise Time: 55.8
nS
Cossⓘ -
Output Capacitance: 4.53
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 750
Ohm
Package:
SOT23
F501
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
F501
Datasheet (PDF)
..1. Size:5799K kexin
f501.pdf
SMD Type TransistorsSilicon N-Channel Power MOSFET (Depletion Mode)F501 SOT-23Unit: mm Features+0.12.9 -0.1 VDS (V) = 500V+0.10.4 -0.1 ID = 0.03 A (VGS = 10V)3 RDS(ON) 850 (VGS = 10V) RDS(ON) 750 (VGS = 0V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11. Gate1. Gate1. Gate2. Source2. Source2. Source3. Drain3.
0.1. Size:154K motorola
mrf5015rev6d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
0.2. Size:138K motorola
mrf5015.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
0.3. Size:138K motorola
mrf5015r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
0.6. Size:1434K pipsemi
f501d.pdf
F501D 600V Depletion-Mode Power MOSFET General Features BVDSX RDS(ON),typ. IDSS Proprietary Advanced Planar Technology 600V 350 12mA Depletion Mode (Normally On) ESD improved Capability Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available Applications Synchronous Rectification Normally-
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