F501 PDF and Equivalents Search

 

F501 Specs and Replacement

Type Designator: F501

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55.8 nS

Cossⓘ - Output Capacitance: 4.53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 750 Ohm

Package: SOT23

F501 substitution

- MOSFET ⓘ Cross-Reference Search

 

F501 datasheet

 ..1. Size:5799K  kexin
f501.pdf pdf_icon

F501

SMD Type Transistors Silicon N-Channel Power MOSFET (Depletion Mode) F501 SOT-23 Unit mm Features +0.1 2.9 -0.1 VDS (V) = 500V +0.1 0.4 -0.1 ID = 0.03 A (VGS = 10V) 3 RDS(ON) 850 (VGS = 10V) RDS(ON) 750 (VGS = 0V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1. Gate 1. Gate 1. Gate 2. Source 2. Source 2. Source 3. Drain 3. ... See More ⇒

 0.1. Size:154K  motorola
mrf5015rev6d.pdf pdf_icon

F501

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒

 0.2. Size:138K  motorola
mrf5015.pdf pdf_icon

F501

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒

 0.3. Size:138K  motorola
mrf5015r.pdf pdf_icon

F501

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒

Detailed specifications: AO4476, AO4492, AO4702, AO4704, AP2322GN, AP9974, BSS138E, D1096, 2SK3568, IRFP064PBF, KDT3055L, KI010NDS, KI138K, KI1N60, KI1N60DS, KI2310, KI2310DS

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