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SM1301NSSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM1301NSSA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.81 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11.8 nS
   Cossⓘ - Capacitancia de salida: 5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: SOT523
     - Selección de transistores por parámetros

 

SM1301NSSA Datasheet (PDF)

 ..1. Size:224K  sino
 sm1301nssa.pdf pdf_icon

SM1301NSSA

SM1301NSSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/0.8A,D RDS(ON)= 0.8 (max.) @ VGS=10V RDS(ON)= 1.1 (max.) @ VGS=4.5VS RDS(ON)= 2.1 (max.) @ VGS=2.5VG Reliable and RuggedTop View of SOT-523 Lead Free and Green Devices Available(RoHS Compliant)D ESD ProtectionGApplications High Speed and Analog Switching ApplicationsS Low voltage d

 9.1. Size:934K  globaltech semi
 gsm1304.pdf pdf_icon

SM1301NSSA

GSM1304 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 280m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 340m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 680m@VGS=1.8V Super high density cell design for extremely These device

 9.2. Size:936K  globaltech semi
 gsm1304e.pdf pdf_icon

SM1301NSSA

GSM1304E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304E, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 320m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 450m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 580m@VGS=1.8V Super high density cell design for extremely These devi

 9.3. Size:1193K  globaltech semi
 gsm1306.pdf pdf_icon

SM1301NSSA

GSM1306 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1306, N-Channel enhancement mode 30V/1.5A , RDS(ON)= 430m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.2A , RDS(ON)= 580m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.6A , RDS(ON)= 860m@VGS=1.8V Super high density cell design for extremely These device

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRF7703G | SSF11NS70UF | IRF2204SPBF | SI4368DY | 75N75L-TQ2-T | IPP80N08S2L-07 | SWK15N04V

 

 
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