SM1301NSSA Todos los transistores

 

SM1301NSSA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM1301NSSA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.81 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.8 nS

Cossⓘ - Capacitancia de salida: 5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: SOT523

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SM1301NSSA datasheet

 ..1. Size:224K  sino
 sm1301nssa.pdf pdf_icon

SM1301NSSA

SM1301NSSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/0.8A, D RDS(ON)= 0.8 (max.) @ VGS=10V RDS(ON)= 1.1 (max.) @ VGS=4.5V S RDS(ON)= 2.1 (max.) @ VGS=2.5V G Reliable and Rugged Top View of SOT-523 Lead Free and Green Devices Available (RoHS Compliant) D ESD Protection G Applications High Speed and Analog Switching Applications S Low voltage d

 9.1. Size:934K  globaltech semi
 gsm1304.pdf pdf_icon

SM1301NSSA

GSM1304 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 280m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 340m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 680m @VGS=1.8V Super high density cell design for extremely These device

 9.2. Size:936K  globaltech semi
 gsm1304e.pdf pdf_icon

SM1301NSSA

GSM1304E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304E, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 320m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 450m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 580m @VGS=1.8V Super high density cell design for extremely These devi

 9.3. Size:1193K  globaltech semi
 gsm1306.pdf pdf_icon

SM1301NSSA

GSM1306 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1306, N-Channel enhancement mode 30V/1.5A , RDS(ON)= 430m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.2A , RDS(ON)= 580m @VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.6A , RDS(ON)= 860m @VGS=1.8V Super high density cell design for extremely These device

MOSTRAR MÁS

Otros transistores... SI9410DY , SIR422DP , UTT6N10Z , APM2518NU , APM2558NU , SM1105NSV , SM1200NSAS , SM1202NSAS , AON7410 , SM1402NSS , SM1691OSCS , SM1A00NSF , SM1A00NSG , SM1A00NSW , SM1A02NSF , SM1A02NSFP , SM1A06NSF .

History: IRF8010S | 2SK3364-01 | 2SK3857MFV

 

 

 

 

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