SM1301NSSA MOSFET Datasheet: N-Ch, 30V, 0.8A. Full specification with pinout and replacement list

SM1301NSSA Specs and Replacement

Type Designator: SM1301NSSA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.81 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.8 nS

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: SOT523

SM1301NSSA substitution

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SM1301NSSA datasheet

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SM1301NSSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/0.8A, D RDS(ON)= 0.8 (max.) @ VGS=10V RDS(ON)= 1.1 (max.) @ VGS=4.5V S RDS(ON)= 2.1 (max.) @ VGS=2.5V G Reliable and Rugged Top View of SOT-523 Lead Free and Green Devices Available (RoHS Compliant) D ESD Protection G Applications High Speed and Analog Switching Applications S Low voltage d... See More ⇒

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GSM1304 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 280m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 340m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 680m @VGS=1.8V Super high density cell design for extremely These device... See More ⇒

9.2. Size:936K globaltech semi
gsm1304e.pdf pdf_icon

GSM1304E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304E, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 320m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 450m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 580m @VGS=1.8V Super high density cell design for extremely These devi... See More ⇒

9.3. Size:1193K globaltech semi
gsm1306.pdf pdf_icon

GSM1306 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1306, N-Channel enhancement mode 30V/1.5A , RDS(ON)= 430m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.2A , RDS(ON)= 580m @VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.6A , RDS(ON)= 860m @VGS=1.8V Super high density cell design for extremely These device... See More ⇒