SM1301NSSA - параметры транзистора MOSFET, его аналоги, datasheet

SM1301NSSA Datasheet (PDF)

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SM1301NSSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/0.8A,D RDS(ON)= 0.8 (max.) @ VGS=10V RDS(ON)= 1.1 (max.) @ VGS=4.5VS RDS(ON)= 2.1 (max.) @ VGS=2.5VG Reliable and RuggedTop View of SOT-523 Lead Free and Green Devices Available(RoHS Compliant)D ESD ProtectionGApplications High Speed and Analog Switching ApplicationsS Low voltage d

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GSM1304 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 280m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 340m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 680m@VGS=1.8V Super high density cell design for extremely These device

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gsm1304e.pdf pdf_icon

GSM1304E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304E, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 320m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 450m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 580m@VGS=1.8V Super high density cell design for extremely These devi

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gsm1306.pdf pdf_icon

GSM1306 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1306, N-Channel enhancement mode 30V/1.5A , RDS(ON)= 430m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.2A , RDS(ON)= 580m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.6A , RDS(ON)= 860m@VGS=1.8V Super high density cell design for extremely These device