IRF722 Todos los transistores

 

IRF722 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF722
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Qgⓘ - Carga de la puerta: 15(max) nC
   trⓘ - Tiempo de subida: 50(max) nS
   Cossⓘ - Capacitancia de salida: 200(max) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO220

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IRF722 Datasheet (PDF)

 ..1. Size:476K  st
irf720 irf721 irf722 irf723-fi.pdf

IRF722 IRF722

 0.1. Size:183K  international rectifier
irf7220gpbf.pdf

IRF722 IRF722

PD -96258IRF7220GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G Dl Halogen-FreeRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve the extremely low on-resi

 0.2. Size:155K  international rectifier
irf7220pbf.pdf

IRF722 IRF722

PD - 95172IRF7220PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic

 0.3. Size:81K  international rectifier
irf7220.pdf

IRF722 IRF722

PD- 91850CIRF7220HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -14V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefi

 0.4. Size:155K  infineon
irf7220pbf.pdf

IRF722 IRF722

PD - 95172IRF7220PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic

Otros transistores... IRF7201 , IRF7204 , IRF7205 , IRF7207 , IRF720A , IRF720FI , IRF720S , IRF721 , NCEP15T14 , IRF7220 , IRF723 , IRF7233 , IRF730 , IRF730A , IRF730AL , IRF730AS , IRF730FI .

 

 
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