IRF722 Datasheet and Replacement
Type Designator: IRF722
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 15(max) nC
tr ⓘ - Rise Time: 50(max) nS
Cossⓘ - Output Capacitance: 200(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220
IRF722 substitution
IRF722 Datasheet (PDF)
irf7220gpbf.pdf

PD -96258IRF7220GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G Dl Halogen-FreeRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve the extremely low on-resi
irf7220pbf.pdf

PD - 95172IRF7220PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic
irf7220.pdf

PD- 91850CIRF7220HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -14V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefi
Datasheet: IRF7201 , IRF7204 , IRF7205 , IRF7207 , IRF720A , IRF720FI , IRF720S , IRF721 , AO3407 , IRF7220 , IRF723 , IRF7233 , IRF730 , IRF730A , IRF730AL , IRF730AS , IRF730FI .
History: HAT1040T
Keywords - IRF722 MOSFET datasheet
IRF722 cross reference
IRF722 equivalent finder
IRF722 lookup
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History: HAT1040T



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