SM2210NSQG Todos los transistores

 ..1. Size:258K  sino
 sm2210nsqg.pdf

SM2210NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 12V/12A, D D RDS(ON) = 4.3m (max.) @ VGS =4.5V RDS(ON) = 5.6m (max.) @ VGS =2.5V G S Pin 1 D D 100% UIS + Rg Tested DFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DDDD (RoHS Compliant) Applications (3)G Battery Management Application. Power Management Fu

 9.1. Size:182K  sino
 sm2217psqg.pdf

SM2217PSQG P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-9.9A, S D RDS(ON) = 17m (max.) @ VGS =-4.5V D D RDS(ON) = 25m (max.) @ VGS =-2.5V RDS(ON) = 40m (max.) @ VGS =-1.8V G S Pin 1 D D Reliable and Rugged DFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DDDD HBM ESD protection level pass 2KV Note The diode connec

 9.2. Size:181K  sino
 sm2213psqg.pdf

SM2213PSQG P-Channel Enhancement Mode MOSFET Features Pin Description -8V/-9.4A, S D D RDS(ON) = 19m (max.) @ VGS =-4.5V D RDS(ON) = 24m (max.) @ VGS =-2.5V G S RDS(ON) = 33m (max.) @ VGS =-1.8V Pin 1 D D RDS(ON) = 45m (max.) @ VGS =-1.5V DFN2x2-6 RDS(ON) = 90m (max.) @ VGS =-1.2V Reliable and Rugged (1,2,5,6) DD DD Lead Free and Green Devices Available (RoH

 9.3. Size:181K  sino
 sm2215psqg.pdf

SM2215PSQG P-Channel Enhancement Mode MOSFET Features Pin Description S D -20V/-9.4A, D D RDS(ON) = 19m (max.) @ VGS =-4.5V RDS(ON) = 27m (max.) @ VGS =-2.5V G S Pin 1 D D RDS(ON) = 45m (max.) @ VGS =-1.8V Super High Dense Cell Design DFN2x2-6 Reliable and Rugged (1,2,5,6) DD DD Lead Free and Green Devices Available (RoHS Compliant) Applications (3)G Powe

 9.4. Size:256K  sino
 sm2211psqg.pdf

SM2211PSQG P-Channel Enhancement Mode MOSFET Features Pin Description S D -30V/-7.9A, D D RDS(ON) = 27m (max.) @ VGS =-10V RDS(ON) = 42m (max.) @ VGS =-4.5V G S Pin 1 D D 100% UIS + Rg Tested DFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DD DD (RoHS Compliant) Applications (3)G Power Management in Notebook Computer, (4)S Port