All MOSFET. SM2210NSQG Datasheet

 

SM2210NSQG Datasheet and Replacement


   Type Designator: SM2210NSQG
   Marking Code: 2210A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 31.8 nC
   tr ⓘ - Rise Time: 23.5 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: DFN2X2A-6
 

 SM2210NSQG substitution

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SM2210NSQG Datasheet (PDF)

 ..1. Size:258K  sino
sm2210nsqg.pdf pdf_icon

SM2210NSQG

SM2210NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 12V/12A,DDRDS(ON) = 4.3m (max.) @ VGS =4.5VRDS(ON) = 5.6m (max.) @ VGS =2.5VG SPin 1DD 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DDDD (RoHS Compliant)Applications(3)G Battery Management Application. Power Management Fu

 9.1. Size:182K  sino
sm2217psqg.pdf pdf_icon

SM2210NSQG

SM2217PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-9.9A,SDRDS(ON) = 17m(max.) @ VGS =-4.5V DDRDS(ON) = 25m(max.) @ VGS =-2.5VRDS(ON) = 40m(max.) @ VGS =-1.8V GSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DDDD HBM ESD protection level pass 2KVNote : The diode connec

 9.2. Size:181K  sino
sm2213psqg.pdf pdf_icon

SM2210NSQG

SM2213PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -8V/-9.4A,SDDRDS(ON) = 19m(max.) @ VGS =-4.5V DRDS(ON) = 24m(max.) @ VGS =-2.5VGSRDS(ON) = 33m(max.) @ VGS =-1.8V Pin 1DDRDS(ON) = 45m(max.) @ VGS =-1.5VDFN2x2-6RDS(ON) = 90m(max.) @ VGS =-1.2V Reliable and Rugged (1,2,5,6)DD DD Lead Free and Green Devices Available(RoH

 9.3. Size:181K  sino
sm2215psqg.pdf pdf_icon

SM2210NSQG

SM2215PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -20V/-9.4A,DDRDS(ON) = 19m(max.) @ VGS =-4.5VRDS(ON) = 27m(max.) @ VGS =-2.5VGSPin 1DDRDS(ON) = 45m(max.) @ VGS =-1.8V Super High Dense Cell DesignDFN2x2-6 Reliable and Rugged(1,2,5,6)DD DD Lead Free and Green Devices Available(RoHS Compliant)Applications(3)G Powe

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History: IXFK44N50

Keywords - SM2210NSQG MOSFET datasheet

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 SM2210NSQG equivalent finder
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