All MOSFET. SM2210NSQG Datasheet

 

SM2210NSQG MOSFET. Datasheet pdf. Equivalent

Type Designator: SM2210NSQG

Marking Code: 2210A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.32 W

Maximum Drain-Source Voltage |Vds|: 12 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 23.5 nS

Drain-Source Capacitance (Cd): 570 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0043 Ohm

Package: DFN2X2A-6

SM2210NSQG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SM2210NSQG Datasheet (PDF)

1.1. sm2210nsqg.pdf Size:258K _sino

SM2210NSQG
SM2210NSQG

SM2210NSQG ® N-Channel Enhancement Mode MOSFET Features Pin Description S D 12V/12A, D D RDS(ON) = 4.3m (max.) @ VGS =4.5V RDS(ON) = 5.6m (max.) @ VGS =2.5V G S Pin 1 D D 100% UIS + Rg Tested DFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DDDD (RoHS Compliant) Applications (3)G Battery Management Application. Power Management Fu

5.1. sm2211psqg.pdf Size:256K _sino

SM2210NSQG
SM2210NSQG

SM2211PSQG ® P-Channel Enhancement Mode MOSFET Features Pin Description S D -30V/-7.9A, D D RDS(ON) = 27m (max.) @ VGS =-10V RDS(ON) = 42m (max.) @ VGS =-4.5V G S Pin 1 D D 100% UIS + Rg Tested DFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DD DD (RoHS Compliant) Applications (3)G Power Management in Notebook Computer, (4)S Port

5.2. sm2217psqg.pdf Size:182K _sino

SM2210NSQG
SM2210NSQG

SM2217PSQG ® P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-9.9A, S D RDS(ON) = 17mΩ(max.) @ VGS =-4.5V D D RDS(ON) = 25mΩ(max.) @ VGS =-2.5V RDS(ON) = 40mΩ(max.) @ VGS =-1.8V G S Pin 1 D D Reliable and Rugged DFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DDDD HBM ESD protection level pass 2KV Note : The diode connec

5.3. sm2213psqg.pdf Size:181K _sino

SM2210NSQG
SM2210NSQG

SM2213PSQG ® P-Channel Enhancement Mode MOSFET Features Pin Description -8V/-9.4A, S D D RDS(ON) = 19mΩ(max.) @ VGS =-4.5V D RDS(ON) = 24mΩ(max.) @ VGS =-2.5V G S RDS(ON) = 33mΩ(max.) @ VGS =-1.8V Pin 1 D D RDS(ON) = 45mΩ(max.) @ VGS =-1.5V DFN2x2-6 RDS(ON) = 90mΩ(max.) @ VGS =-1.2V Reliable and Rugged (1,2,5,6) DD DD Lead Free and Green Devices Available (RoH

5.4. sm2215psqg.pdf Size:181K _sino

SM2210NSQG
SM2210NSQG

SM2215PSQG ® P-Channel Enhancement Mode MOSFET Features Pin Description S D -20V/-9.4A, D D RDS(ON) = 19mΩ(max.) @ VGS =-4.5V RDS(ON) = 27mΩ(max.) @ VGS =-2.5V G S Pin 1 D D RDS(ON) = 45mΩ(max.) @ VGS =-1.8V Super High Dense Cell Design DFN2x2-6 Reliable and Rugged (1,2,5,6) DD DD Lead Free and Green Devices Available (RoHS Compliant) Applications (3)G Powe

Datasheet: SM4502NHKP , SM4503NHKP , SM4504NHKP , SM4506NHKP , SM2203NSQG , SM2204NSQG , SM2206NSQG , SM2208NSQG , 40673 , SM2225NSQG , SM2260NSQG , SM2290NSQG , SM2320NSA , SM2326NSAN , SM2360NSA , SM2370NSA , SM2404NSAN .

 


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