SM2360NSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM2360NSA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7.2 nS
   Cossⓘ - Capacitancia de salida: 29 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.104 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET SM2360NSA

SM2360NSA Datasheet (PDF)

..1. Size:261K sino
sm2360nsa.pdf

SM2360NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/2.7A ,DRDS(ON)=104m (max.) @ VGS=10VS RDS(ON)=130m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in DC/AC Inverer Systems.SN-Channel MOSFETOrdering and Marking InformationSM2360NS Packa

9.1. Size:230K sino
sm2363psa.pdf

SM2363PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -60V/-1.8A,DRDS(ON)= 225m (max.) @ VGS=-10VRDS(ON)= 300m (max.) @ VGS=-4.5VS ESD ProtectionG 100% UIS+Rg TestedTop View of SOT-23 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in DC/DC Converter. Load switch.SP-Channel MOSFET

9.2. Size:842K globaltech semi
gsm2367as.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m@VGS=-1.8V These devices are particularly suited for low Super high density cell

9.3. Size:850K globaltech semi
gsm2367s.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=80m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m@VGS=-1.8V These devices are particularly suited for low Super high density cell d

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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