SM2360NSA Todos los transistores

 

SM2360NSA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM2360NSA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.2 nS

Cossⓘ - Capacitancia de salida: 29 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.104 Ohm

Encapsulados: SOT23

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SM2360NSA datasheet

 ..1. Size:261K  sino
 sm2360nsa.pdf pdf_icon

SM2360NSA

SM2360NSA N-Channel Enhancement Mode MOSFET Features Pin Description 60V/2.7A , D RDS(ON)=104m (max.) @ VGS=10V S RDS(ON)=130m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G Power Management in DC/AC Inverer Systems. S N-Channel MOSFET Ordering and Marking Information SM2360NS Packa

 9.1. Size:230K  sino
 sm2363psa.pdf pdf_icon

SM2360NSA

SM2363PSA P-Channel Enhancement Mode MOSFET Features Pin Description -60V/-1.8A, D RDS(ON)= 225m (max.) @ VGS=-10V RDS(ON)= 300m (max.) @ VGS=-4.5V S ESD Protection G 100% UIS+Rg Tested Top View of SOT-23 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in DC/DC Converter. Load switch. S P-Channel MOSFET

 9.2. Size:842K  globaltech semi
 gsm2367as.pdf pdf_icon

SM2360NSA

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m @VGS=-1.8V These devices are particularly suited for low Super high density cell

 9.3. Size:850K  globaltech semi
 gsm2367s.pdf pdf_icon

SM2360NSA

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=80m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m @VGS=-1.8V These devices are particularly suited for low Super high density cell d

MOSTRAR MÁS

Otros transistores... SM2206NSQG , SM2208NSQG , SM2210NSQG , SM2225NSQG , SM2260NSQG , SM2290NSQG , SM2320NSA , SM2326NSAN , IRF830 , SM2370NSA , SM2404NSAN , SM2416NSAN , SM2430NSAN , SM2501NSU , SM2518NSUC , SM2518NUB , SM2558NUB .

History: 100N03A | CS8N80A8H | APM2605C | AP4532GM-HF | CS8N60ARD | SMK0825FZ | PJM3401PSA

 

 

 

 

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