SM2360NSA Todos los transistores

 ..1. Size:261K  sino
 sm2360nsa.pdf

SM2360NSA N-Channel Enhancement Mode MOSFET Features Pin Description 60V/2.7A , D RDS(ON)=104m (max.) @ VGS=10V S RDS(ON)=130m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G Power Management in DC/AC Inverer Systems. S N-Channel MOSFET Ordering and Marking Information SM2360NS Packa

 9.1. Size:230K  sino
 sm2363psa.pdf

SM2363PSA P-Channel Enhancement Mode MOSFET Features Pin Description -60V/-1.8A, D RDS(ON)= 225m (max.) @ VGS=-10V RDS(ON)= 300m (max.) @ VGS=-4.5V S ESD Protection G 100% UIS+Rg Tested Top View of SOT-23 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in DC/DC Converter. Load switch. S P-Channel MOSFET

 9.2. Size:842K  globaltech semi
 gsm2367as.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m @VGS=-1.8V These devices are particularly suited for low Super high density cell

 9.3. Size:850K  globaltech semi
 gsm2367s.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=80m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m @VGS=-1.8V These devices are particularly suited for low Super high density cell d