SM2360NSA - параметры транзистора MOSFET, его аналоги, datasheet

SM2360NSA Datasheet (PDF)

..1. Size:261K sino
sm2360nsa.pdf pdf_icon

SM2360NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/2.7A ,DRDS(ON)=104m (max.) @ VGS=10VS RDS(ON)=130m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in DC/AC Inverer Systems.SN-Channel MOSFETOrdering and Marking InformationSM2360NS Packa

9.1. Size:230K sino
sm2363psa.pdf pdf_icon

SM2363PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -60V/-1.8A,DRDS(ON)= 225m (max.) @ VGS=-10VRDS(ON)= 300m (max.) @ VGS=-4.5VS ESD ProtectionG 100% UIS+Rg TestedTop View of SOT-23 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in DC/DC Converter. Load switch.SP-Channel MOSFET

9.2. Size:842K globaltech semi
gsm2367as.pdf pdf_icon

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m@VGS=-1.8V These devices are particularly suited for low Super high density cell

9.3. Size:850K globaltech semi
gsm2367s.pdf pdf_icon

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=80m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m@VGS=-1.8V These devices are particularly suited for low Super high density cell d

Другие MOSFET... SM2206NSQG , SM2208NSQG , SM2210NSQG , SM2225NSQG , SM2260NSQG , SM2290NSQG , SM2320NSA , SM2326NSAN , IRF1405 , SM2370NSA , SM2404NSAN , SM2416NSAN , SM2430NSAN , SM2501NSU , SM2518NSUC , SM2518NUB , SM2558NUB .