SM2360NSA - аналоги, параметры транзистора - Справочник транзисторов

SM2360NSA даташит

..1. Size:261K sino
sm2360nsa.pdf pdf_icon

SM2360NSA N-Channel Enhancement Mode MOSFET Features Pin Description 60V/2.7A , D RDS(ON)=104m (max.) @ VGS=10V S RDS(ON)=130m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G Power Management in DC/AC Inverer Systems. S N-Channel MOSFET Ordering and Marking Information SM2360NS Packa

9.1. Size:230K sino
sm2363psa.pdf pdf_icon

SM2363PSA P-Channel Enhancement Mode MOSFET Features Pin Description -60V/-1.8A, D RDS(ON)= 225m (max.) @ VGS=-10V RDS(ON)= 300m (max.) @ VGS=-4.5V S ESD Protection G 100% UIS+Rg Tested Top View of SOT-23 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in DC/DC Converter. Load switch. S P-Channel MOSFET

9.2. Size:842K globaltech semi
gsm2367as.pdf pdf_icon

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m @VGS=-1.8V These devices are particularly suited for low Super high density cell

9.3. Size:850K globaltech semi
gsm2367s.pdf pdf_icon

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=80m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m @VGS=-1.8V These devices are particularly suited for low Super high density cell d

Другие MOSFET... SM2206NSQG , SM2208NSQG , SM2210NSQG , SM2225NSQG , SM2260NSQG , SM2290NSQG , SM2320NSA , SM2326NSAN , IRF830 , SM2370NSA , SM2404NSAN , SM2416NSAN , SM2430NSAN , SM2501NSU , SM2518NSUC , SM2518NUB , SM2558NUB .