SM2360NSA MOSFET Datasheet: N-Ch, 60V, 2.7A. Full specification with pinout and replacement list

SM2360NSA Specs and Replacement

Type Designator: SM2360NSA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm

Package: SOT23

SM2360NSA substitution

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SM2360NSA datasheet

..1. Size:261K sino
sm2360nsa.pdf pdf_icon

SM2360NSA N-Channel Enhancement Mode MOSFET Features Pin Description 60V/2.7A , D RDS(ON)=104m (max.) @ VGS=10V S RDS(ON)=130m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G Power Management in DC/AC Inverer Systems. S N-Channel MOSFET Ordering and Marking Information SM2360NS Packa... See More ⇒

9.1. Size:230K sino
sm2363psa.pdf pdf_icon

SM2363PSA P-Channel Enhancement Mode MOSFET Features Pin Description -60V/-1.8A, D RDS(ON)= 225m (max.) @ VGS=-10V RDS(ON)= 300m (max.) @ VGS=-4.5V S ESD Protection G 100% UIS+Rg Tested Top View of SOT-23 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in DC/DC Converter. Load switch. S P-Channel MOSFET... See More ⇒

9.2. Size:842K globaltech semi
gsm2367as.pdf pdf_icon

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m @VGS=-1.8V These devices are particularly suited for low Super high density cell ... See More ⇒

9.3. Size:850K globaltech semi
gsm2367s.pdf pdf_icon

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=80m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m @VGS=-1.8V These devices are particularly suited for low Super high density cell d... See More ⇒

Detailed specifications: SM2206NSQG, SM2208NSQG, SM2210NSQG, SM2225NSQG, SM2260NSQG, SM2290NSQG, SM2320NSA, SM2326NSAN, IRF830, SM2370NSA, SM2404NSAN, SM2416NSAN, SM2430NSAN, SM2501NSU, SM2518NSUC, SM2518NUB, SM2558NUB