IRF740AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD- 92005SMPS MOSFETIRF740AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55 10A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 PakAvalanch

PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and2

IRF740AS, SiHF740AS, IRF740AL, SiHF740ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) ()VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.9RuggednessQgd (nC) 16 Fully Characterized Capac

PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D 2

PD- 94828SMPS MOSFETIRF740APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanch

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur

IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur

isc N-Channel Mosfet Transistor IRF740AFEATURESDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM