IRF740AS datasheet, подбор замены

 ..1. Size:135K  international rectifier
 irf740as.pdf 

PD- 92005 SMPS MOSFET IRF740AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanch

 ..2. Size:316K  international rectifier
 irf740alpbf irf740aspbf.pdf 

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and 2

 ..3. Size:207K  vishay
 irf740as sihf740as irf740al sihf740al.pdf 

IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 400 Definition RDS(on) ( )VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 9.9 Ruggedness Qgd (nC) 16 Fully Characterized Capac

 0.1. Size:304K  international rectifier
 irf740as-l.pdf 

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2

 7.1. Size:196K  international rectifier
 irf740a.pdf 

PD- 94828 SMPS MOSFET IRF740APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanch

 7.2. Size:937K  samsung
 irf740a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 7.3. Size:205K  vishay
 irf740a sihf740a.pdf 

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) ( )VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configur

 7.4. Size:206K  vishay
 irf740apbf sihf740a.pdf 

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) ( )VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configur

 7.5. Size:213K  inchange semiconductor
 irf740a.pdf 

isc N-Channel Mosfet Transistor IRF740A FEATURES Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switch mode power supply Uninterruptable power supply High speed power switching ABSOLUTE MAXIMUM