All MOSFET. IRF740AS Datasheet

 

IRF740AS MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF740AS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm

Package: D2PAK

IRF740AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF740AS PDF doc:

1.1. irf740as-l.pdf Size:304K _international_rectifier

IRF740AS
IRF740AS

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262

1.2. irf740as.pdf Size:135K _international_rectifier

IRF740AS
IRF740AS

PD- 92005 SMPS MOSFET IRF740AS/L HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55? 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Volt

3.1. irf740a.pdf Size:196K _international_rectifier

IRF740AS
IRF740AS

PD- 94828 SMPS MOSFET IRF740APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volt

3.2. irf740a.pdf Size:937K _samsung

IRF740AS
IRF740AS

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

3.3. irf740a_sihf740a.pdf Size:205K _vishay

IRF740AS
IRF740AS

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) (?)VGS = 10 V 0.55 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configuration Singl

Datasheet: IRF737LC , IRF740 , IRF7401 , IRF7403 , IRF7404 , IRF7406 , IRF740A , IRF740AL , IRFP450 , IRF740FI , IRF740S , IRF741 , IRF7413 , IRF7413A , IRF7416 , IRF742 , IRF7421D1 .

 


IRF740AS
  IRF740AS
  IRF740AS
  IRF740AS
 
IRF740AS
  IRF740AS
  IRF740AS
  IRF740AS
 

social 

LIST

Last Update

MOSFET: AOT9N40L | AOT7S65L | AOT7S60L | AOT4S60L | AOT462 | AOT42S60L | AOT428 | AOT426 | AOT402 | AOT400 | AOTF7S60L | AOTF7S60 | AOTF298L | AOTF20S60L | AOTF18N65L |

Enter a full or partial SMD code with a minimum of 2 letters or numbers