SM3406NSQG Todos los transistores

 

SM3406NSQG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM3406NSQG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14.5 nS
   Cossⓘ - Capacitancia de salida: 730 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
   Paquete / Cubierta: DFN3.3X3.3C-8
 

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SM3406NSQG datasheet

 ..1. Size:154K  sino
 sm3406nsqg.pdf pdf_icon

SM3406NSQG

SM3406NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 20V/17.8A, RDS(ON) = 3.4m (max.) @ VGS =4.5V G RDS(ON) = 4.5m (max.) @ VGS =2.5V S Pin 1 S S RDS(ON) = 7m (max.) @ VGS =1.8V 100% UIS + Rg Tested DFN3.3x3.3C-8_EP Reliable and Rugged (5,6,7,8) DDDD Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power M

 8.1. Size:885K  globaltech semi
 gsm3406s.pdf pdf_icon

SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 8.2. Size:884K  globaltech semi
 gsm3406.pdf pdf_icon

SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 8.3. Size:863K  globaltech semi
 gsm3406a.pdf pdf_icon

SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

MOSTRAR MÁS

Otros transistores... SM4024NSK , SM4024NSKP , SM4024NSU , SM4026NSUC , SM4028NSU , SM3402NSQG , SM3404NSQG , SM3405NSQG , AON7506 , SM3408NSQG , SM3412NHQG , SM3424NHQA , SM3425NHQA , SM3433NHQG , SM3439NHQA , SM6128NSK , SM6128NSKP .

 

 

 


 
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