SM3406NSQG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM3406NSQG
   Código: SM3406N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 14.5 nS
   Cossⓘ - Capacitancia de salida: 730 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
   Paquete / Cubierta: DFN3.3X3.3C-8

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SM3406NSQG Datasheet (PDF)

..1. Size:154K sino
sm3406nsqg.pdf

SM3406NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 20V/17.8A,RDS(ON) = 3.4m(max.) @ VGS =4.5VGRDS(ON) = 4.5m(max.) @ VGS =2.5V SPin 1SSRDS(ON) = 7m(max.) @ VGS =1.8V 100% UIS + Rg TestedDFN3.3x3.3C-8_EP Reliable and Rugged(5,6,7,8)DDDD Lead Free and Green Devices Available (RoHS Compliant)(4) GApplications Power M

8.1. Size:885K globaltech semi
gsm3406s.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

8.2. Size:884K globaltech semi
gsm3406.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

8.3. Size:863K globaltech semi
gsm3406a.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

8.4. Size:877K globaltech semi
gsm3406as.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.4A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) powe

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