SM3406NSQG Datasheet and Replacement. Cross Reference Search

SM3406NSQG Datasheet (PDF)

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SM3406NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 20V/17.8A,RDS(ON) = 3.4m(max.) @ VGS =4.5VGRDS(ON) = 4.5m(max.) @ VGS =2.5V SPin 1SSRDS(ON) = 7m(max.) @ VGS =1.8V 100% UIS + Rg TestedDFN3.3x3.3C-8_EP Reliable and Rugged(5,6,7,8)DDDD Lead Free and Green Devices Available (RoHS Compliant)(4) GApplications Power M

8.1. Size:885K globaltech semi
gsm3406s.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

8.2. Size:884K globaltech semi
gsm3406.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

8.3. Size:863K globaltech semi
gsm3406a.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power