SM3406NSQG Datasheet. Specs and Replacement

Type Designator: SM3406NSQG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 730 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: DFN3.3X3.3C-8

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SM3406NSQG datasheet

 ..1. Size:154K  sino
 sm3406nsqg.pdf pdf_icon

SM3406NSQG

SM3406NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 20V/17.8A, RDS(ON) = 3.4m (max.) @ VGS =4.5V G RDS(ON) = 4.5m (max.) @ VGS =2.5V S Pin 1 S S RDS(ON) = 7m (max.) @ VGS =1.8V 100% UIS + Rg Tested DFN3.3x3.3C-8_EP Reliable and Rugged (5,6,7,8) DDDD Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power M... See More ⇒

 8.1. Size:885K  globaltech semi
 gsm3406s.pdf pdf_icon

SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power... See More ⇒

 8.2. Size:884K  globaltech semi
 gsm3406.pdf pdf_icon

SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ... See More ⇒

 8.3. Size:863K  globaltech semi
 gsm3406a.pdf pdf_icon

SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power... See More ⇒

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Detailed specifications: SM4024NSK, SM4024NSKP, SM4024NSU, SM4026NSUC, SM4028NSU, SM3402NSQG, SM3404NSQG, SM3405NSQG, AO4407A, SM3408NSQG, SM3412NHQG, SM3424NHQA, SM3425NHQA, SM3433NHQG, SM3439NHQA, SM6128NSK, SM6128NSKP

Keywords - SM3406NSQG MOSFET specs

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