SM3406NSQG
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM3406NSQG
Marking Code: SM3406N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 14.5
nS
Cossⓘ -
Output Capacitance: 730
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034
Ohm
Package: DFN3.3X3.3C-8
SM3406NSQG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM3406NSQG
Datasheet (PDF)
..1. Size:154K sino
sm3406nsqg.pdf
SM3406NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 20V/17.8A,RDS(ON) = 3.4m(max.) @ VGS =4.5VGRDS(ON) = 4.5m(max.) @ VGS =2.5V SPin 1SSRDS(ON) = 7m(max.) @ VGS =1.8V 100% UIS + Rg TestedDFN3.3x3.3C-8_EP Reliable and Rugged(5,6,7,8)DDDD Lead Free and Green Devices Available (RoHS Compliant)(4) GApplications Power M
8.1. Size:885K globaltech semi
gsm3406s.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
8.2. Size:884K globaltech semi
gsm3406.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
8.3. Size:863K globaltech semi
gsm3406a.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
8.4. Size:877K globaltech semi
gsm3406as.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.4A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) powe
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