SM3406NSQG MOSFET Datasheet: N-Ch, 20V, 50A. Full specification with pinout and replacement list

SM3406NSQG Specs and Replacement

   Type Designator: SM3406NSQG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 14.5 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: DFN3.3X3.3C-8

SM3406NSQG substitution

- MOSFET ⓘ Cross-Reference Search

SM3406NSQG datasheet

..1. Size:154K sino
sm3406nsqg.pdf pdf_icon

SM3406NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 20V/17.8A, RDS(ON) = 3.4m (max.) @ VGS =4.5V G RDS(ON) = 4.5m (max.) @ VGS =2.5V S Pin 1 S S RDS(ON) = 7m (max.) @ VGS =1.8V 100% UIS + Rg Tested DFN3.3x3.3C-8_EP Reliable and Rugged (5,6,7,8) DDDD Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power M... See More ⇒

8.1. Size:885K globaltech semi
gsm3406s.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power... See More ⇒

8.2. Size:884K globaltech semi
gsm3406.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ... See More ⇒

8.3. Size:863K globaltech semi
gsm3406a.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power... See More ⇒