All MOSFET. SM3406NSQG Datasheet

 

SM3406NSQG Datasheet and Replacement


   Type Designator: SM3406NSQG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.5 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: DFN3.3X3.3C-8
 

 SM3406NSQG substitution

   - MOSFET ⓘ Cross-Reference Search

 

SM3406NSQG Datasheet (PDF)

 ..1. Size:154K  sino
 sm3406nsqg.pdf pdf_icon

SM3406NSQG

SM3406NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 20V/17.8A,RDS(ON) = 3.4m(max.) @ VGS =4.5VGRDS(ON) = 4.5m(max.) @ VGS =2.5V SPin 1SSRDS(ON) = 7m(max.) @ VGS =1.8V 100% UIS + Rg TestedDFN3.3x3.3C-8_EP Reliable and Rugged(5,6,7,8)DDDD Lead Free and Green Devices Available (RoHS Compliant)(4) GApplications Power M

 8.1. Size:885K  globaltech semi
 gsm3406s.pdf pdf_icon

SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 8.2. Size:884K  globaltech semi
 gsm3406.pdf pdf_icon

SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 8.3. Size:863K  globaltech semi
 gsm3406a.pdf pdf_icon

SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

SHOW MORE

Datasheet: SM4024NSK , SM4024NSKP , SM4024NSU , SM4026NSUC , SM4028NSU , SM3402NSQG , SM3404NSQG , SM3405NSQG , IRFP250 , SM3408NSQG , SM3412NHQG , SM3424NHQA , SM3425NHQA , SM3433NHQG , SM3439NHQA , SM6128NSK , SM6128NSKP .

Keywords - SM3406NSQG MOSFET datasheet

 SM3406NSQG cross reference
 SM3406NSQG equivalent finder
 SM3406NSQG lookup
 SM3406NSQG substitution
 SM3406NSQG replacement

 

 
Back to Top

 


 
.