SM3406NSQG - аналоги, параметры транзистора - Справочник транзисторов

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SM3406NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 20V/17.8A, RDS(ON) = 3.4m (max.) @ VGS =4.5V G RDS(ON) = 4.5m (max.) @ VGS =2.5V S Pin 1 S S RDS(ON) = 7m (max.) @ VGS =1.8V 100% UIS + Rg Tested DFN3.3x3.3C-8_EP Reliable and Rugged (5,6,7,8) DDDD Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power M

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gsm3406s.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

8.2. Size:884K globaltech semi
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30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

8.3. Size:863K globaltech semi
gsm3406a.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power