Справочник MOSFET. SM3406NSQG

 

SM3406NSQG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SM3406NSQG
   Маркировка: SM3406N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 35 nC
   trⓘ - Время нарастания: 14.5 ns
   Cossⓘ - Выходная емкость: 730 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm
   Тип корпуса: DFN3.3X3.3C-8

 Аналог (замена) для SM3406NSQG

 

 

SM3406NSQG Datasheet (PDF)

 ..1. Size:154K  sino
 sm3406nsqg.pdf

SM3406NSQG SM3406NSQG

SM3406NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 20V/17.8A,RDS(ON) = 3.4m(max.) @ VGS =4.5VGRDS(ON) = 4.5m(max.) @ VGS =2.5V SPin 1SSRDS(ON) = 7m(max.) @ VGS =1.8V 100% UIS + Rg TestedDFN3.3x3.3C-8_EP Reliable and Rugged(5,6,7,8)DDDD Lead Free and Green Devices Available (RoHS Compliant)(4) GApplications Power M

 8.1. Size:885K  globaltech semi
 gsm3406s.pdf

SM3406NSQG SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 8.2. Size:884K  globaltech semi
 gsm3406.pdf

SM3406NSQG SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 8.3. Size:863K  globaltech semi
 gsm3406a.pdf

SM3406NSQG SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 8.4. Size:877K  globaltech semi
 gsm3406as.pdf

SM3406NSQG SM3406NSQG

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.4A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) powe

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