MXP1015AT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MXP1015AT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 231 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 82 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 71 nS
   Cossⓘ - Capacitancia de salida: 317 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO220

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MXP1015AT Datasheet (PDF)

..1. Size:231K maxpower
mxp1015at.pdf

MXP1015AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 15m 82A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number

8.1. Size:123K maxpower
mxp1018ct.pdf

MXP1018CT Datasheet 100V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 100 V 18 m 76Features: LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP1018 TO220 MXP Absolute Maximum Ratings Tc=2

9.1. Size:232K maxpower
mxp1006at.pdf

MXP1006AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 6m 155A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number

9.2. Size:255K maxpower
mxp1008at.pdf

MXP1008AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 8m 115A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number

9.3. Size:582K maxpower
mxp1007at.pdf

MXP1007AT 100V N-ch Power MOSFET General Features BVDSS RDS(ON),max. ID[2] Proprietary New Trench Technology 100V 7.0m 143 RDS(ON),typ.=5.3m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Pa

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SJ138

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