MXP1015AT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MXP1015AT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 231 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 82 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 71 nS
Cossⓘ - Capacitancia de salida: 317 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de MXP1015AT MOSFET
- Selecciónⓘ de transistores por parámetros
MXP1015AT datasheet
mxp1015at.pdf
MXP1015AT 100V N-Channel MOSFET Applications Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 15m 82A High Efficiency Synchronous Rectification in SMPS Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS Ruggedness Ordering Information Park Number
mxp1018ct.pdf
MXP1018CT Datasheet 100V N-Channel MOSFET Applications Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 100 V 18 m 76 Features LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP1018 TO220 MXP Absolute Maximum Ratings Tc=2
mxp1006at.pdf
MXP1006AT 100V N-Channel MOSFET Applications Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 6m 155A High Efficiency Synchronous Rectification in SMPS Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS Ruggedness Ordering Information Park Number
mxp1008at.pdf
MXP1008AT 100V N-Channel MOSFET Applications Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 8m 115A High Efficiency Synchronous Rectification in SMPS Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS Ruggedness Ordering Information Park Number
Otros transistores... SM3319NSQG , SM3317NSQA , SM3317NSQG , SM3316NSQA , SM3316NSQG , MXP1006AT , MXP1007AT , MXP1008AT , IRFB4110 , MXP43P9AD , MXP43P9AE , MXP43P9AF , MXP43P9AT , MXP65D7AQ , MXP65D7AT , MXP8004AT , MXP84D7AT .
History: NDT1N70 | 75N05E | 2SK1913
History: NDT1N70 | 75N05E | 2SK1913
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