MXP1015AT
MOSFET. Datasheet pdf. Equivalent
Type Designator: MXP1015AT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 231
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 82
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 64
nC
trⓘ - Rise Time: 71
nS
Cossⓘ -
Output Capacitance: 317
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package:
TO220
MXP1015AT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MXP1015AT
Datasheet (PDF)
..1. Size:231K maxpower
mxp1015at.pdf 
MXP1015AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 15m 82A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number
8.1. Size:123K maxpower
mxp1018ct.pdf
MXP1018CT Datasheet 100V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 100 V 18 m 76Features: LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP1018 TO220 MXP Absolute Maximum Ratings Tc=2
9.1. Size:232K maxpower
mxp1006at.pdf
MXP1006AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 6m 155A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number
9.2. Size:255K maxpower
mxp1008at.pdf
MXP1008AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 8m 115A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number
9.3. Size:582K maxpower
mxp1007at.pdf
MXP1007AT 100V N-ch Power MOSFET General Features BVDSS RDS(ON),max. ID[2] Proprietary New Trench Technology 100V 7.0m 143 RDS(ON),typ.=5.3m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Pa
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
