SM2013PSKP Todos los transistores

 ..1. Size:258K  sino
 sm2013pskp.pdf

SM2013PSKP P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-100Aa, D D RDS(ON) = 3.0m (max.) @ VGS =-10V D D RDS(ON) = 3.9m (max.) @ VGS =-4.5V RDS(ON) = 5.7m (max.) @ VGS =-2.5V G Pin 1 S S 100% UIS + Rg Tested S DFN5x6A-8_EP Reliable and Rugged Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) DDDD Applications (4) Portable Equi

 9.1. Size:117K  st
 esm2012.pdf

ESM2012DV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

 9.2. Size:259K  sino
 sm2014nsu.pdf

SM2014NSU N-Channel Enhancement Mode MOSFET Features Pin Description 20V/13.8A, D RDS(ON)= 19.5m (max.) @ VGS=4.5V S RDS(ON)= 27m (max.) @ VGS=2.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) ESD Protection. D (2) Applications G (1) Power Management in Notebook Computer, Portable Equipment and Battery Powered Syste

 9.3. Size:256K  sino
 sm2011pskp.pdf

SM2011PSKP P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-100Aa, D D RDS(ON) = 2.0m (max.) @ VGS =-10V D D RDS(ON) = 2.5m (max.) @ VGS =-4.5V RDS(ON) = 3.6m (max.) @ VGS =-2.5V G Pin 1 S S 100% UIS + Rg Tested S DFN5x6A-8_EP ESD Protection Reliable and Rugged ( 5,6,7,8 ) Lead Free and Green Devices Available DDDD (RoHS Compliant) (4) Applications

 9.4. Size:286K  sino
 sm2014nskp.pdf

SM2014NSKP N-Channel Enhancement Mode MOSFET Features Pin Description 20V/13.8A, D D D D RDS(ON)= 19.5m (max.) @ VGS=4.5V RDS(ON)= 27m (max.) @ VGS=2.5V G Pin 1 Reliable and Rugged S S S Lead Free and Green Devices Available DFN5x6-8 (RoHS Compliant) ESD Protection. D (5, 6) Applications G (4) Power Management in Notebook Computer, Portable Equipment and Battery

 9.5. Size:969K  globaltech semi
 gsm2014.pdf

GSM2014 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2014, N-Channel enhancement mode 20V/10A,RDS(ON)=14m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/8A,RDS(ON)=17m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=21m @VGS=1.8V Super high density cell design for extremely These devices are particularl