SM2013PSKP - аналоги, параметры транзистора - Справочник транзисторов

SM2013PSKP даташит

..1. Size:258K sino
sm2013pskp.pdf pdf_icon

SM2013PSKP P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-100Aa, D D RDS(ON) = 3.0m (max.) @ VGS =-10V D D RDS(ON) = 3.9m (max.) @ VGS =-4.5V RDS(ON) = 5.7m (max.) @ VGS =-2.5V G Pin 1 S S 100% UIS + Rg Tested S DFN5x6A-8_EP Reliable and Rugged Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) DDDD Applications (4) Portable Equi

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esm2012.pdf pdf_icon

ESM2012DV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

9.2. Size:259K sino
sm2014nsu.pdf pdf_icon

SM2014NSU N-Channel Enhancement Mode MOSFET Features Pin Description 20V/13.8A, D RDS(ON)= 19.5m (max.) @ VGS=4.5V S RDS(ON)= 27m (max.) @ VGS=2.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) ESD Protection. D (2) Applications G (1) Power Management in Notebook Computer, Portable Equipment and Battery Powered Syste

9.3. Size:256K sino
sm2011pskp.pdf pdf_icon

SM2011PSKP P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-100Aa, D D RDS(ON) = 2.0m (max.) @ VGS =-10V D D RDS(ON) = 2.5m (max.) @ VGS =-4.5V RDS(ON) = 3.6m (max.) @ VGS =-2.5V G Pin 1 S S 100% UIS + Rg Tested S DFN5x6A-8_EP ESD Protection Reliable and Rugged ( 5,6,7,8 ) Lead Free and Green Devices Available DDDD (RoHS Compliant) (4) Applications