All MOSFET. SM2013PSKP Datasheet

 

SM2013PSKP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM2013PSKP
   Marking Code: 2013PS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 1355 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: DFN5X6-8

 SM2013PSKP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM2013PSKP Datasheet (PDF)

 ..1. Size:258K  sino
 sm2013pskp.pdf

SM2013PSKP SM2013PSKP

SM2013PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-100Aa,DDRDS(ON) = 3.0m (max.) @ VGS =-10V DDRDS(ON) = 3.9m (max.) @ VGS =-4.5VRDS(ON) = 5.7m (max.) @ VGS =-2.5VGPin 1SS 100% UIS + Rg TestedSDFN5x6A-8_EP Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)DDDDApplications(4) Portable Equi

 9.1. Size:117K  st
 esm2012.pdf

SM2013PSKP SM2013PSKP

ESM2012DVNPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCEINDUSTRIAL APPLICATIONS: MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERSISOTOPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS

 9.2. Size:259K  sino
 sm2014nsu.pdf

SM2013PSKP SM2013PSKP

SM2014NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DRDS(ON)= 19.5m (max.) @ VGS=4.5VSRDS(ON)= 27m (max.) @ VGS=2.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant) ESD Protection. D (2)ApplicationsG (1) Power Management in Notebook Computer,Portable Equipment and Battery PoweredSyste

 9.3. Size:256K  sino
 sm2011pskp.pdf

SM2013PSKP SM2013PSKP

SM2011PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-100Aa,DDRDS(ON) = 2.0m (max.) @ VGS =-10V DDRDS(ON) = 2.5m (max.) @ VGS =-4.5VRDS(ON) = 3.6m (max.) @ VGS =-2.5VGPin 1SS 100% UIS + Rg TestedSDFN5x6A-8_EP ESD Protection Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices Available DDDD(RoHS Compliant)(4)Applications

 9.4. Size:286K  sino
 sm2014nskp.pdf

SM2013PSKP SM2013PSKP

SM2014NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DDDDRDS(ON)= 19.5m (max.) @ VGS=4.5VRDS(ON)= 27m (max.) @ VGS=2.5VGPin 1 Reliable and RuggedSSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant) ESD Protection.D (5, 6)ApplicationsG (4) Power Management in Notebook Computer,Portable Equipment and Battery

 9.5. Size:969K  globaltech semi
 gsm2014.pdf

SM2013PSKP SM2013PSKP

GSM2014 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2014, N-Channel enhancement mode 20V/10A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/8A,RDS(ON)=17m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=21m@VGS=1.8V Super high density cell design for extremely These devices are particularl

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History: ECH8674 | IRF7313Q | ECH8310

 

 
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