SM2013PSKP Datasheet and Replacement

SM2013PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-100Aa,DDRDS(ON) = 3.0m (max.) @ VGS =-10V DDRDS(ON) = 3.9m (max.) @ VGS =-4.5VRDS(ON) = 5.7m (max.) @ VGS =-2.5VGPin 1SS 100% UIS + Rg TestedSDFN5x6A-8_EP Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)DDDDApplications(4) Portable Equi

ESM2012DVNPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCEINDUSTRIAL APPLICATIONS: MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERSISOTOPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS

SM2014NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DRDS(ON)= 19.5m (max.) @ VGS=4.5VSRDS(ON)= 27m (max.) @ VGS=2.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant) ESD Protection. D (2)ApplicationsG (1) Power Management in Notebook Computer,Portable Equipment and Battery PoweredSyste

SM2011PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-100Aa,DDRDS(ON) = 2.0m (max.) @ VGS =-10V DDRDS(ON) = 2.5m (max.) @ VGS =-4.5VRDS(ON) = 3.6m (max.) @ VGS =-2.5VGPin 1SS 100% UIS + Rg TestedSDFN5x6A-8_EP ESD Protection Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices Available DDDD(RoHS Compliant)(4)Applications

SM2014NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DDDDRDS(ON)= 19.5m (max.) @ VGS=4.5VRDS(ON)= 27m (max.) @ VGS=2.5VGPin 1 Reliable and RuggedSSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant) ESD Protection.D (5, 6)ApplicationsG (4) Power Management in Notebook Computer,Portable Equipment and Battery

GSM2014 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2014, N-Channel enhancement mode 20V/10A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/8A,RDS(ON)=17m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=21m@VGS=1.8V Super high density cell design for extremely These devices are particularl