SM2309PSA Todos los transistores

 

SM2309PSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM2309PSA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.8 nS
   Cossⓘ - Capacitancia de salida: 43 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
   Paquete / Cubierta: SOT23

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SM2309PSA Datasheet (PDF)

 ..1. Size:258K  sino
sm2309psa.pdf

SM2309PSA
SM2309PSA

SM2309PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-3.1A,DRDS(ON) = 95m (max.) @ VGS =-10VSRDS(ON) = 150m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.P-Channel MO

 8.1. Size:881K  globaltech semi
gsm2309a.pdf

SM2309PSA
SM2309PSA

GSM2309A 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench -60V/-1.6A,RDS(ON)=320m@VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maxim

 8.2. Size:881K  globaltech semi
gsm2309.pdf

SM2309PSA
SM2309PSA

GSM2309 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench -60V/-1.4A,RDS(ON)=320m@VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maximum

 8.3. Size:307K  silicon standard
ssm2309gn.pdf

SM2309PSA
SM2309PSA

SSM2309GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -30VDSimple drive requirement R 75mDS(ON)Fast switching ID -3.7AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2309GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. It is well suitedSfor low voltage applications such as DC/DC c

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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