SM2309PSA Todos los transistores

 

SM2309PSA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM2309PSA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.8 nS

Cossⓘ - Capacitancia de salida: 43 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm

Encapsulados: SOT23

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SM2309PSA datasheet

 ..1. Size:258K  sino
sm2309psa.pdf pdf_icon

SM2309PSA

SM2309PSA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-3.1A, D RDS(ON) = 95m (max.) @ VGS =-10V S RDS(ON) = 150m (max.) @ VGS =-4.5V G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) D G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered S Systems. P-Channel MO

 8.1. Size:881K  globaltech semi
gsm2309a.pdf pdf_icon

SM2309PSA

GSM2309A 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench -60V/-1.6A,RDS(ON)=320m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maxim

 8.2. Size:881K  globaltech semi
gsm2309.pdf pdf_icon

SM2309PSA

GSM2309 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench -60V/-1.4A,RDS(ON)=320m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maximum

 8.3. Size:307K  silicon standard
ssm2309gn.pdf pdf_icon

SM2309PSA

SSM2309GN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -30V D Simple drive requirement R 75m DS(ON) Fast switching ID -3.7A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2309GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. It is well suited S for low voltage applications such as DC/DC c

Otros transistores... SM4050PSV , SM4301PSK , SM4301PSKP , SM4301PSU , SM4301PSUC , SM2303PSA , SM2305PSA , SM2307PSA , IRFP250N , SM2311PSA , SM2313PSA , SM2315PSA , SM2317PSA , SM2319PSAN , SM2321PSA , SM2323PSA , SM2329PSA .

History: AO3410 | SM3303PSQG | KXF3055

 

 

 


History: AO3410 | SM3303PSQG | KXF3055

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