SM2309PSA PDF and Equivalents Search

 

SM2309PSA Specs and Replacement

Type Designator: SM2309PSA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.8 nS

Cossⓘ - Output Capacitance: 43 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: SOT23

SM2309PSA substitution

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SM2309PSA datasheet

 ..1. Size:258K  sino
sm2309psa.pdf pdf_icon

SM2309PSA

SM2309PSA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-3.1A, D RDS(ON) = 95m (max.) @ VGS =-10V S RDS(ON) = 150m (max.) @ VGS =-4.5V G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) D G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered S Systems. P-Channel MO... See More ⇒

 8.1. Size:881K  globaltech semi
gsm2309a.pdf pdf_icon

SM2309PSA

GSM2309A 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench -60V/-1.6A,RDS(ON)=320m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maxim... See More ⇒

 8.2. Size:881K  globaltech semi
gsm2309.pdf pdf_icon

SM2309PSA

GSM2309 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench -60V/-1.4A,RDS(ON)=320m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maximum... See More ⇒

 8.3. Size:307K  silicon standard
ssm2309gn.pdf pdf_icon

SM2309PSA

SSM2309GN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -30V D Simple drive requirement R 75m DS(ON) Fast switching ID -3.7A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2309GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. It is well suited S for low voltage applications such as DC/DC c... See More ⇒

Detailed specifications: SM4050PSV, SM4301PSK, SM4301PSKP, SM4301PSU, SM4301PSUC, SM2303PSA, SM2305PSA, SM2307PSA, IRFP250N, SM2311PSA, SM2313PSA, SM2315PSA, SM2317PSA, SM2319PSAN, SM2321PSA, SM2323PSA, SM2329PSA

Keywords - SM2309PSA MOSFET specs

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