SM2620CSC Todos los transistores

 

SM2620CSC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM2620CSC
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.9(3) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 37(42) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039(0.1) Ohm
   Paquete / Cubierta: SOT23-6

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SM2620CSC Datasheet (PDF)

 ..1. Size:200K  sino
sm2620csc.pdf

SM2620CSC SM2620CSC

SM2620CSC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 30V/4.9A, D2S1 RDS(ON)=39m(max.) @ VGS=10VD1G2S2 RDS(ON)=68m(max.) @ VGS=4.5VG1 P-ChannelTop View of SOT-23-6 -30V/-3A,RDS(ON)=100m(max.) @ VGS=-10V(4)D2(6)D1RDS(ON)=170m(max.) @ VGS=-4.5V Reliable and Rugged Lead Free and Green Devices Availabl

 9.1. Size:2744K  1
jsm2622.pdf

SM2620CSC SM2620CSC

JSM2622N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET DDescription The JSM2622 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = 20V,ID = 50A RDS(ON) Typ =4.5m@ VGS=10V 18RDS(ON) =5.0m@ VGS=4.5V Typ

 9.2. Size:162K  sino
sm2617psc sm2621psc.pdf

SM2620CSC SM2620CSC

SM2621PSC P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS -30V/-5.1A ,DDGRDS(ON)= 54m (Max.) @ VGS=-10VDRDS(ON)= 65m (Max.) @ VGS=-4.5VD RDS(ON)= 92m (Max.) @ VGS=-2.5VTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DD DDApplications(3)G Power Management in Notebook Comput

 9.3. Size:2140K  huashuo
hsm2627.pdf

SM2620CSC SM2620CSC

HSM2627 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2627 is the high cell density trenched VDS -20 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 9 m synchronous buck converter applications. ID -10.7 A The HSM2627 meet the RoHS and Green Product requirement with full function reliability approved. l

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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