All MOSFET. SM2620CSC Datasheet

 

SM2620CSC MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM2620CSC
   Marking Code: K20*
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4.9(3) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.8 nC
   Cossⓘ - Output Capacitance: 37(42) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039(0.1) Ohm
   Package: SOT23-6

 SM2620CSC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM2620CSC Datasheet (PDF)

 ..1. Size:200K  sino
 sm2620csc.pdf

SM2620CSC SM2620CSC

SM2620CSC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 30V/4.9A, D2S1 RDS(ON)=39m(max.) @ VGS=10VD1G2S2 RDS(ON)=68m(max.) @ VGS=4.5VG1 P-ChannelTop View of SOT-23-6 -30V/-3A,RDS(ON)=100m(max.) @ VGS=-10V(4)D2(6)D1RDS(ON)=170m(max.) @ VGS=-4.5V Reliable and Rugged Lead Free and Green Devices Availabl

 9.1. Size:2744K  1
 jsm2622.pdf

SM2620CSC SM2620CSC

JSM2622N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET DDescription The JSM2622 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = 20V,ID = 50A RDS(ON) Typ =4.5m@ VGS=10V 18RDS(ON) =5.0m@ VGS=4.5V Typ

 9.2. Size:162K  sino
 sm2617psc sm2621psc.pdf

SM2620CSC SM2620CSC

SM2621PSC P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS -30V/-5.1A ,DDGRDS(ON)= 54m (Max.) @ VGS=-10VDRDS(ON)= 65m (Max.) @ VGS=-4.5VD RDS(ON)= 92m (Max.) @ VGS=-2.5VTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DD DDApplications(3)G Power Management in Notebook Comput

 9.3. Size:2140K  huashuo
 hsm2627.pdf

SM2620CSC SM2620CSC

HSM2627 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2627 is the high cell density trenched VDS -20 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 9 m synchronous buck converter applications. ID -10.7 A The HSM2627 meet the RoHS and Green Product requirement with full function reliability approved. l

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPP100N06S3L-03 | IPP100N04S2L-03 | SM6A23NSFP | RSR025N05 | SMF4N60 | VSD013N10MS | APT8030JVFR

 

 
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