SM2620CSC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 30V/4.9A, D2S1 RDS(ON)=39m(max.) @ VGS=10VD1G2S2 RDS(ON)=68m(max.) @ VGS=4.5VG1 P-ChannelTop View of SOT-23-6 -30V/-3A,RDS(ON)=100m(max.) @ VGS=-10V(4)D2(6)D1RDS(ON)=170m(max.) @ VGS=-4.5V Reliable and Rugged Lead Free and Green Devices Availabl

JSM2622N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET DDescription The JSM2622 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = 20V,ID = 50A RDS(ON) Typ =4.5m@ VGS=10V 18RDS(ON) =5.0m@ VGS=4.5V Typ

SM2621PSC P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS -30V/-5.1A ,DDGRDS(ON)= 54m (Max.) @ VGS=-10VDRDS(ON)= 65m (Max.) @ VGS=-4.5VD RDS(ON)= 92m (Max.) @ VGS=-2.5VTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DD DDApplications(3)G Power Management in Notebook Comput

HSM2627 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2627 is the high cell density trenched VDS -20 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 9 m synchronous buck converter applications. ID -10.7 A The HSM2627 meet the RoHS and Green Product requirement with full function reliability approved. l