SSM70T03J Todos los transistores

 6.1. Size:333K  silicon standard
 ssm70t03h-j.pdf

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 6.2. Size:620K  silicon standard
 ssm70t03gh ssm70t03gj.pdf

SSM70T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM70T03 acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It is RDS(ON) 9m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 60A D The SSM70T03GH is in a TO-252 package, which is Pb-free; RoHS-

 9.1. Size:792K  silicon standard
 ssm7002egu.pdf

SSM7002EGU N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM7002EGU acheives fast switching performance BVDSS 50V with low gate charge without a complex drive circuit. It RDS(ON) 3 is suitable for low voltage applications such as small converters and general load-switching circuits. I D 250mA The SSM7002EGU is supplied in a RoHS-compliant Pb-free; RoHS-

 9.2. Size:495K  silicon standard
 ssm7002kgen.pdf

SSM7002KGEN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM7002KGEN acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 2 is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 640mA D The SSM7002KGEN is supplied in an RoHS-compliant Pb-free; R

 9.3. Size:808K  silicon standard
 ssm7002dgu.pdf

SSM7002DGU Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM7002DG acheives fast switching performance BVDSS 50V with low gate charge without a complex drive circuit. It RDS(ON) 3 is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I D 250mA The SSM7002DGU is supplied in a RoHS-compliant Pb-free;