All MOSFET. SSM70T03J Datasheet

 

SSM70T03J Datasheet and Replacement


   Type Designator: SSM70T03J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO251
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SSM70T03J Datasheet (PDF)

 6.1. Size:333K  silicon standard
 ssm70t03h-j.pdf pdf_icon

SSM70T03J

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 6.2. Size:620K  silicon standard
 ssm70t03gh ssm70t03gj.pdf pdf_icon

SSM70T03J

SSM70T03GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM70T03 acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. It isRDS(ON) 9msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 60AD The SSM70T03GH is in a TO-252 package, which isPb-free; RoHS-

 9.1. Size:792K  silicon standard
 ssm7002egu.pdf pdf_icon

SSM70T03J

SSM7002EGUN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7002EGU acheives fast switching performanceBVDSS50Vwith low gate charge without a complex drive circuit. ItRDS(ON) 3is suitable for low voltage applications such as smallconverters and general load-switching circuits.ID 250mAThe SSM7002EGU is supplied in a RoHS-compliantPb-free; RoHS-

 9.2. Size:495K  silicon standard
 ssm7002kgen.pdf pdf_icon

SSM70T03J

SSM7002KGENN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7002KGEN acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2is suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 640mAD The SSM7002KGEN is supplied in an RoHS-compliantPb-free; R

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History: TK2P60D | IRFBG20

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