IRFD123 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFD123
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.3 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
Paquete / Cubierta: HEXDIP
Búsqueda de reemplazo de IRFD123 MOSFET
IRFD123 Datasheet (PDF)
irfd123.pdf

PD - 97015IRFD12306/09/05Document Number: 90161 www.vishay.com1IRFD123Document Number: 90161 www.vishay.com2IRFD123Document Number: 90161 www.vishay.com3IRFD123Document Number: 90161 www.vishay.com4IRFD123Document Number: 90161 www.vishay.com5IRFD123Document Number: 90161 www.vishay.com6IRFD123Peak Diode Recovery dv/dt Test Circuit+Circuit Lay
irfd123 sihfd123.pdf

IRFD123, SiHFD123Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
irfd123pbf.pdf

IRFD123, SiHFD123Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
irfd120pbf.pdf

PD- 95928IRFD120PbF Lead-Free10/27/04Document Number: 91128 www.vishay.com1IRFD120PbFDocument Number: 91128 www.vishay.com2IRFD120PbFDocument Number: 91128 www.vishay.com3IRFD120PbFDocument Number: 91128 www.vishay.com4IRFD120PbFDocument Number: 91128 www.vishay.com5IRFD120PbFDocument Number: 91128 www.vishay.com6IRFD120PbFPeak Diode Recovery
Otros transistores... RFL1P08 , RFL1P10 , RFP2N18L , AP9916H , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , STP75NF75 , SIHFD123 , 2SK1202 , IPD06N03LA , IPU06N03LA , IPS06N03LA , IPF06N03LA , IXFT50N50P3 , IXFQ50N50P3 .
History: FRE260H | 2N6768JAN | 2N6781 | FDP12N60NZ | NTD5865NL | FQP6N60C | MDI4N60BTH
History: FRE260H | 2N6768JAN | 2N6781 | FDP12N60NZ | NTD5865NL | FQP6N60C | MDI4N60BTH



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